2016 Samsung Foundry Update!
February 1, 2016
When sketching out the chapters for our book “Mobile UnLeashed” we sought out the events and technology that empowered the mobile devices that literally changed our world. One of the companies that enabled this change of course is Samsung. Cleverly embedded in chapter 8 “To Seoul, via Austin” is the story of how Samsung got into the foundry business. Once you read this chapter and see how Samsung Foundry got to where they are today you will be in a much better position to understand where they are going tomorrow, absolutely.
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Related Semiconductor IP
- High Bandwidth Memory 3 (HBM3/3E) IP optimized for Samsung SF4X
- Temperature Sensor, +/-3C Accuracy without Trimming - Samsung 8nm
- LDO, 1.8V to 0.75V, 100mA Output Capability - Samsung 8nm
- 1.8V/3.3V Switchable GPIO with 5V I2C Open Drain and Analog Cells in Samsung 11nm
- LPDDR5X/5/4X/4 combo PHY at Samsung SF5A
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- 2010 Semiconductor Foundry Update: Consolidation!
- Samsung is NOT a Foundry!
- SoC and Foundry Update 2H 2015!
- Rambus showcases 56G Multi-Protocol SerDes (MPS) PHY at the Samsung Foundry Forum
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