Samsung IP
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193
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USB3.0 PHY on GF22FDX and Samsung 28nm FDSOI
- The USB3.0 PHY IP is designed according to the USB 3.0, USB2.0 Specification.
- It supports the USB3.0 5Gbps Super-Speed mode and backward compatibles with the USB2.0 480Mbps High-Speed, 12Mbps Full-Speed, and 1.5Mbps Low-Speed modes
- The USB 3.0 PHY interface complies with PHY Interface for PCI Express and USB3.0 Architectures specification (PIPE 3.0) and the USB2.0 PHY interface complies with the UTMI v1.05 specification.
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HSSTP TX PHY 5nm Samsung Foundry
- Samsung Foundry 5nm (SF5A) CMOS device technology
- 1.8V±5%, 0.75V±5% power supply
- Fully supports ARM HSSTP v6.0
- Supports 1.5/3/6Gbps data rates
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16b 80Msps DAC with 10KHz BW in samsung 8nm
- Technology: Samsung 8nm LPP process
- Metal Scheme:11M_3Mx_6Dx_1Gx_1Iz_LB
- Programmable Gain
- Programmable Offset
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12b, 2Gsps, Self-Calibrating Current Steering IQDAC in samsung 8nm for 5G & WIFI6
- Technology: Samsung 8nm LPP process
- Metal Scheme: 11M_3Mx_6Dx_1Gx_1Iz_LB
- 12b Resolution, Fs = 2Gsps
- Programmable 20mA Differential Current source
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Dual channel 12-bit, 2GS/s ADC for 5G & WIFI6 in Samsung 8nm
- Technology: Samsung 8nm LPP process
- Metal Scheme:11M_3Mx_6Dx_1Gx_1Iz_LB
- Dual channel 12-bit, 2GS/s Analog-to-Digital Converter
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12-bit, 6MS/s ADC for Microcontroller Business in Samsung LFR6LP
- Process Node: Samsung LFR6LP
- 12-bit SAR ADC @ 6MS/s conversion range.
- The ADC power scales linearly with clock speed. (DC to 6Msps)
- Single-ended/ Differential input modes
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1.8V/3.3V Switchable GPIO With 5V I2C Open - Drain & Analog Cells in Samsung 11nm LPP
- Multi-voltage 1.8V / 3.3V switchable operation
- 4 selectable drive strengths (25-235 MHz @ 1.8V, 10pF
- Full-speed output enable
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Ultra-low quiescent capacitor-less LDO voltage regulator in Samsung Foundries 65nm LFR6LP
- Ultra-low quiescent current to enable very low power consumption in sleep and deep sleep mode
- Low BoM, no external capacitor required
- Embedded voltage reference
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Low-power Power-On-reset design in Samsung Foundries 65nm LFR6LP process
- Low-power power-on-reset solution for power-critical IoT applications (50 nA operating current)
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Low-voltage detector designed in Samsung Foundries 65nm LFR6LP process node
- Low-voltage monitoring solution for power-critical IoT applications (250 nA operating current)
- Embedded level shifters with isolation capabilities