Adaptive Body Bias IP
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8
IP
from 2 vendors
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8)
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ABX® Automotive Adaptive Body Biasing Generator - GLOBALFOUNDRIES 22FDX
- RI_ABB_GF22FDX_AM is an adaptive body bias voltage generator for automotive applications in Globalfoundries 22FDX® technology.
- It contains a closed loop body bias regulation loop to generate N-well and P-well bias voltages for compensation of process, voltage and temperature (PVT) variations during operation.
- This results in up to 76% leakage power improvement for automotive grade-1 applications up to 150°C junction temperature.
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Adaptive Body Biasing Generator - GLOBALFOUNDRIES 22FDX
- ABB generator, standard cells, SRAM
- Up to 9X performance
- 75% leakage reduction
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Body bias voltage generator - GLOBALFOUNDRIES 22FDX
- Integrated adaptive body bias control loop
- Charge pumps for N-Well and P-Well voltages, operated from IO supply voltage level, reverse bias capability
- Integrated PVT monitors
- True Independent regulation of NMOS and PMOS performance
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Low Power Memory Compiler - 1-Port Register File Compiler - GF 22nm FDX
- Specifically designed for ultra-low power applications, this memory leverages body biasing to dramatically reduce power consumption.
- Compatible with industry Adaptive Body Biasing IP for PVT and aging compensation
- Body Biasing functionality (up to +1.3V / -1.5V) to reduce leakage or increase speed at the same power
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Low Power Memory Compiler - Single Port SRAM - GF 22nm FDX
- Silicon proven Single Port SRAM compiler for GF22 FDX - Memory optimized for low power and supports body biasing.
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Single Rail SRAM GLOBALFOUNDRIES 22FDX
- Single port SRAM compiler based on Racyics® R188 logic memory cell with dual-well architecture
- Supply voltage 0.55 V to 0.8 V enabled with Racyics® ABB
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Dual-Rail SRAM Globalfoundries 22FDX
- Single port SRAM compiler based on P124 bitcell with Dual-supply-rail architecture
- Bitcell array supply voltage 0.8V and ULV core interface down to 0.4V enabled with Racyics' ABB
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Standard Cell Libraries - GLOBALFOUNDRIES 22FDX
- Contains >300 cells, various Vt and channel length options
- Robust power supply rails on M2, optimized M1 pin access with at least two on-track M2 access points
- DFM and variability optimized layouts and variation aware placement attributes for automated place&route
- Enabled for reliable ULV operation down to 0.4 V in combination with adaptive forward body bias