Weebit Resistive RAM (ReRAM) is a new type of Non-Volatile Memory (NVM) that is designed to be the successor to flash memory. The ReRAM IP can provide a high level of differentiation for System-on-Chip (SoC) designs, with performance, power, cost, security, environmental, and a range of additional advantages compared to flash and other NVMs.
The vendor’s first ReRAM IP product is available now in SkyWater Technology’s 130nm CMOS process (S130). The technology is fully qualified, available for integration in SkyWater’s users’ SoCs, and ready for production.
Getting Started
Weebit ReRAM IP is delivered as an embedded module with a complete set of collateral and EDA views to enable smooth integration by SoC architects using state-of-the-art EDA tools. Upon request, the module is available as part of a complete subsystem including a RISC-V microcontroller (MCU), system interfaces, Static Random-Access Memory (SRAM), and peripherals.
Weebit ReRAM technology is highly scalable and customizable by storage capacity, foundry, and process node. In addition to being available in SkyWater’s 130nm CMOS process, the technology is fully qualified in 130nm in CEA-Leti’s state-of-the-art fab. It has also been proven in 28nm and taped-out in an advanced 22nm FD-SOI process.
Specifications
| Technology | 130nm, SkyWater S130 |
| Mask Adder | 2 |
| Supply Voltage | 1.8V Read, 1.8V+3.3/3.6V Program |
| Read Access Time | <20nsec |
| Operation Temp. | -40°C - 125°C (can be extended to -55°C) |
| Capacity | 256 Kbit (can be customized for 128Kbit - 2Mbit) |
| Data Bus Width (Read) | 32-bit (can be customized to 16-bit to 128-bit) |
| System Interface | APB (can be customized AHB / AXI / OBI / QSPI) |
| Endurance (Write cycles) | 10K |
| Data Retention | ≥10 years @125°C |
