Special IP for SMIC
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DDR4 IO for memory PHY, 3200Mbps on SMIC 40nm
- The DDR4 IO is used to transfer the Command/Address/Clk and Data between the memory controller PHY and the DRAM device
- The TX is designed to send information from PHY to DRAM and RX is designed to receive information which is from DRAM.
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Memory Compiler in TSMC (16nm,22nm,28nm,40nm,55nm,90BCD+,110nm,152nm,180BCD)
- Synchronous read/write operation
- Low leakage current and lower operation power consumption
- Minimum metal layer requirement: 4/3 metal layers
- High density layout structure and small area design
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SMIC 0.13um 1.2V/3.3V ONFI and MultIO combo IO
- Process: Semiconductor Manufacturing International Corporation (SMIC) 0.13um Logic Salicide 1.2/3.3V process
- Supply voltage:----1.5V~3.3V for I/O power supply;----1.2V core power supply
- Power on sequence control for low leakage
- Configurable output strength to support multIO nad ONFI
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SMIC18 General process, Multi-Voltage IO with high voltage voltence
- SMIC 0.18um Logic 1P6M Salicide 1.8V/3.3V process
- Supports a broad range of IO power supply from 1.62V to 3.3V
- Supports power-on sequence control
- Supports to selectively enable both input and output
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SMIC18 General process, Multi-Voltage IO, High ESD perfermance
- SMIC 0.18um Logic 1P6M Salicide 1.8V/3.3V process
- Support configurable output driving capability with selective slew rate control
- Support configurable pull up and pull down resistor
- Support both CMOS and Schmitt input
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SMIC18 General process, Multi-Voltage IO, driver current: 10mA~80mA
- SMIC 0.18um Logic 1P6M Salicide 1.8V/3.3V process
- Support large range IO power supply from 1.5V to 3.3V
- Support configurable output driving capability with selective slew rate control
- Support configurable pull up and pull down resistor
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VeriSilicon SMIC 0.13um 1.2V/3.3V Multiple DUP I/O Cell
- Process: Semiconductor Manufacturing International Corporation (SMIC) 0.13um Logic Salicide 1.2/3.3V process
- Supply voltage:
- ----1.35V~3.6V for I/O power supply
- ----1.2V core power supply
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VeriSilicon SMIC 0.13um 1.2V/3.3V Multiple I/O Cell
- Process: Semiconductor Manufacturing International Corporation (SMIC) 0.13um Logic Salicide 1.2/3.3V process
- Supply voltage:
- ----1.8V~3.3V for I/O power supply
- ----1.2V core power supply
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VeriSilicon SMIC 0.13um 1.2V/3.3V Multiple I/O Cell
- Process: Semiconductor Manufacturing International Corporation (SMIC) 0.13um Logic Salicide 1.2/3.3V process
- Supply voltage:
- ----1.5V~3.3V for I/O power supply
- ----1.2V core power supply
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VeriSilicon SMIC 0.13um 1.2V/3.3V Multiple I/O 01C Library
- SMIC 0.13um Logic 1P8M Salicide 3.3V device process
- Supports a broad range of IO power supply from 1.5V to 3.3V
- Supports configurable output driving capability (i.e., from 2mA ~24mA at 3.3V power supply) with selective slew rate control
- Supports configurable pull up and pull down resistor