FinFET impact on dynamic power
Arvind Narayanan, Mentor Graphics
EDN (March 11, 2015)
FinFET transistors are now in production at the major foundries, having gone from drawing board to products on the shelf in record time. FinFET adoption has been growing steadily because they deliver better power, performance, and area compared to their planar counterparts. This makes them very compelling for smartphones, tablets, and other products that require long battery life and snappy performance. Figure 1 shows the advantages in speed, power usage, and density of TSMC’s 16nm FinFET process over two other processes.
To read the full article, click here
Related Semiconductor IP
- USB 4.0 V2 PHY - 4TX/2RX, TSMC N3P , North/South Poly Orientation
- FH-OFDM Modem
- NFC wireless interface supporting ISO14443 A and B with EEPROM on SMIC 180nm
- PQC CRYSTALS core for accelerating NIST FIPS 202 FIPS 203 and FIPS 204
- USB Full Speed Transceiver
Related White Papers
- A need for static and dynamic Low Power Verification
- An efficient approach to evaluate Dynamic and Static voltage-drop on a multi-million transistor SoC design
- System configurations for power systems based on PMBus 1.3
- A Review Paper on CMOS, SOI and FinFET Technology
Latest White Papers
- FastPath: A Hybrid Approach for Efficient Hardware Security Verification
- Automotive IP-Cores: Evolution and Future Perspectives
- TROJAN-GUARD: Hardware Trojans Detection Using GNN in RTL Designs
- How a Standardized Approach Can Accelerate Development of Safety and Security in Automotive Imaging Systems
- SV-LLM: An Agentic Approach for SoC Security Verification using Large Language Models