FinFET impact on dynamic power
Arvind Narayanan, Mentor Graphics
EDN (March 11, 2015)
FinFET transistors are now in production at the major foundries, having gone from drawing board to products on the shelf in record time. FinFET adoption has been growing steadily because they deliver better power, performance, and area compared to their planar counterparts. This makes them very compelling for smartphones, tablets, and other products that require long battery life and snappy performance. Figure 1 shows the advantages in speed, power usage, and density of TSMC’s 16nm FinFET process over two other processes.
To read the full article, click here
Related Semiconductor IP
- Bluetooth Low Energy 6.0 Digital IP
- Ultra-low power high dynamic range image sensor
- Flash Memory LDPC Decoder IP Core
- SLM Signal Integrity Monitor
- Digital PUF IP
Related White Papers
- A need for static and dynamic Low Power Verification
- An efficient approach to evaluate Dynamic and Static voltage-drop on a multi-million transistor SoC design
- System configurations for power systems based on PMBus 1.3
- A Review Paper on CMOS, SOI and FinFET Technology
Latest White Papers
- How Next-Gen Chips Are Unlocking RISC-V’s Customization Advantage
- Efficient Hardware-Assisted Heap Memory Safety for Embedded RISC-V Systems
- Automatically Retargeting Hardware and Code Generation for RISC-V Custom Instructions
- How Mature-Technology ASICs Can Give You the Edge
- Exploring the Latest Innovations in MIPI D-PHY and MIPI C-PHY