Founder steps aside as Cynergy CEO
Founder steps aside as Cynergy CEO
By Richard Goering, EE Times
August 28, 2001 (5:21 p.m. EST)
URL: http://www.eetimes.com/story/OEG20010828S0093
AUSTIN, Texas Cynergy System Design Inc., a startup looking to become a major provider of high-level verification tools, has named Thomas Robert Conn Jr. as its new president and chief executive officer. Conn, a longtime veteran of Motorola Inc., replaces company founder Prem Jain as chief executive of Cynergy, formerly called CAE Systems Inc. Jain will become chairman and chief technology officer of the company, which provides clock-accurate C language design tools and models for embedded hardware and software verification. Conn held various operational and managerial positions at Motorola's Semiconductor Products Sector, where he worked for 20 years. Before joining Cynergy, he was vice president and general manager of Motorola's Imaging Systems Division. Cynergy has also named Steven Smith as its vice president of engineering. Smith, who has 20 years of engineering experience, joins Cynergy fr om digital video provider Salient Systems Corp.
Related Semiconductor IP
- xSPI Master IP | NOR IP
- xSPI - PSRAM Master
- VESA VDC-M Encoder IP
- VESA DSC V1.2 Encoder
- VESA DSC V1.2 Decoder
Related News
- Co-founder steps aside as president of 0-In
- Agile Analog welcomes Sir Hossein Yassaie, former Imagination Technologies Founder and CEO, to its Board
- Nvidia Abandons Arm Deal, Segars Steps Aside for IPO
- DVCon India 2023 | Keynote: "Journeying Beyond AI: Unleashing the Art of Verification" by Sivakumar P R, Founder & CEO, Maven Silicon
Latest News
- How CXL 3.1 and PCIe 6.2 are Redefining Compute Efficiency
- Secure-IC at Computex 2025: Enabling Trust in AI, Chiplets, and Quantum-Ready Systems
- Automotive Industry Charts New Course with RISC-V
- Xiphera Partners with Siemens Cre8Ventures to Strengthen Automotive Security and Support EU Chips Act Sovereignty Goals
- NY CREATES and Fraunhofer Institute Announce Joint Development Agreement to Advance Memory Devices at the 300mm Wafer Scale