Voltage Reference IP for TSMC

Compare 19 Voltage Reference IP for TSMC from 6 vendors (1 - 10)

Voltage & Current Reference Generator in TSMC 6/7nm FFC
- The ODT-REF-6T is a reference current and voltage generator. This block includes a VREF/R circuit to create programmable voltages and currents.
- ODT-REF-6T requires a constant 0.6V voltage input (ideally derived from a bandgap) in order to generate the required signals.
High-performance reference current and voltage generator in 12nm CMOS
- The ODT-REF-SV1P8-12nm is a highperformance reference current and voltage generator.
- The block incorporates a proprietary architecture to achieve high power supply rejection across an ultra-wide bandwidth, which is needed for high speed data converter applications.
1.8V programmable voltage and current reference on TSMC 16nm FFC
- The ODT-REF-16FFCT-SV1P8 is a highperformance reference current and voltage generator.
- The block incorporates a proprietary architecture to achieve high power supply rejection across an ultra-wide bandwidth, which is needed for high speed data converter applications.
- ODT-REF-16FFCT-SV1P8 does not need any calibration or programming.
High-performance reference current and voltage generator in TSMC 4nm CMOS
- The ODT-REF-SV1P2_4nm is a high-performance reference current and voltage generator.
- The block incorporates a proprietary architecture to achieve high power supply rejection across an ultra-wide bandwidth, which is needed for high-speed data converter applications.
TSMC 180nm 5V Bandgap
- 2.5V-5.5V operation.
- 3σ 4% untrimmed voltage reference accuracy.
- 2% variation over -40ºC to 125ºC after trimming.
- 70dB low frequency PSRR.
- Trimmed, temperature compensated, 10µA reference current outputs with 3% accuracy.
- Trimmed IPTAT output currents can be provided.
- Less than 8µV noise from 0.1Hz to 10KHz.
Micro Power Bandgap for TSMC 180nm
- Less than 1µW power dissipation.
- Bandgap untrimmed precision of ±10% over process, temperature, and voltage.
- 100nA PTAT bias current output.
- 1.6V-2V operation
- Power down input.
1.16 V Bandgap voltage reference
- TSMC SiGe BiCMOS 0.18 um
- Output voltage 1.16 V
- Compensated in wide temperature range
- Based on n-p-n bipolar transistors
Power management unit (0.9V, 1.8V, 3.3V output voltages, 1.2V reference voltage and 10uA/1uA reference currents)
- TSMC 28nm eFlash technology
- Bandgap output voltage 1.2V
- Bandgap output voltage accuracy without trimming ±3% @5.0V
Power Management Unit (1.1 - 1.4V output voltage, load current 5 mA)
- TSMC CMOS 55 nm
- Output voltage: 1.1 ... 1.4 V
- Low current consumption
0.6V/10u, 20uA, 100nA, 200nA Reference voltage and current source
- TSMC CMOS 55 nm
- Output voltage 0.606 V
- Temperature-compensated voltage in wide temperature range
- Low current consumption
- Small area