The OT0120t130 is a 1.2V CMOS micro power CMOS bandgap and current reference cell with sub-µW power dissipation. Can be utilized as non-precision sleep mode bandgap, allowing a higher powered precision bandgap to be powered down.
Micro Power Bandgap for TSMC 180nm
Overview
Key Features
- Less than 1µW power dissipation.
- Bandgap untrimmed precision of ±10% over process, temperature, and voltage.
- 100nA PTAT bias current output.
- 1.6V-2V operation
- Power down input.
- Built in switch for glitchless switching between main and sleep mode bandgaps.
- Base cell area 0.02mm2 in 0.18µ CMOS.
- Uses 4 metal layers.
Block Diagram
Applications
- Micro-power systems
- Sleep mode bandgap
Deliverables
- Verilog model.
- Metal outline.
- Spice netlist for LVS.
- Design review spice files.
- GDS format layout.
- Timing files.
- Integration notes.
- Production test notes.
Technical Specifications
Foundry, Node
TSMC 180nm
TSMC
Pre-Silicon:
180nm
G
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