Voltage Regulator IP for Samsung

Compare 8 Voltage Regulator IP for Samsung from 4 vendors (1 - 8)

IR DROP Samsung
- • Active current current1: 120uA
- • Powered-down current: <1uA
- • Detection time1: 25nS typ.
- • Hysteresis1: 20mV typ.
Power-On-Reset Samsung
- Start-up Time: max 10us
- Configurable Threshold
- Programmable Delay
- Uses Hysteresis to avoid false resets in noisy environments
Linear LDO Low-Dropout Voltage Regulator Samsung
- Input Voltage Range: PDK VddIO
- Programmable Output Voltage Range
- Current Load: <1mA to 100mA
- PSRR
Scalable, On-Die Voltage Regulation
- Droop and DFS/DVFS response profile
- Programmable droop and DFS/DVFS response rate
Low-power capacitor-less LDO designed in Samsung Foundries LF6RLP process
- Low BoM, no external capacitor required
- Low shutdown current to ensure low power power consumption in sleep mode when the LDO is turned off
- Three modes : operation, IDLE and STOP1 to enable various power modes at SoC-level
Low-power capacitor-less LDO with embedded voltage reference designed in Samsung Foundries LF6RLP process
- Low BoM, no external capacitor required
- Low shutdown current (40 nA) to ensure low power power consumption in sleep mode when the LDO is turned off
- Three modes : operation, IDLE and STOP1 to enable various power modes at SoC-level
30mA 2-channel LDO voltage regulator (output voltage each channel 1.0V)
- Samsung 28nm FD-SOI
- 1.8V analog input voltage
- 1.0V digital input voltage
Ultra-low quiescent capacitor-less LDO voltage regulator in Samsung Foundries 65nm LFR6LP
- Ultra-low quiescent current to enable very low power consumption in sleep and deep sleep mode
- Low BoM, no external capacitor required
- Embedded voltage reference