Memory & Libraries IP for GLOBALFOUNDRIES

Compare 5 Memory & Libraries IP for GLOBALFOUNDRIES from 3 vendors (1 - 5)

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12nm

1.8V and 3.3V Radiation-Hardened GPIO with Optimized LDO in GF 12nm
- A radiation-hardened GlobalFoundries 12nm LP/LP+ Flip-Chip IO library with both 1.8V and 3.3V GPIO, fail-safe GPI, analog cell, and associated ESD. Also features an LDO optimized for use with 3.3V GPIO.
- This radiation-hardened, by design, library features both a 1.8 and 3.3V GPIO with multiple drive strengths of 2mA, 4mA, 8mA, and 16mA, along with a full-speed output enable function.
GF12 - 0.8V LVDS Rad-Hard Transceiver in GF 12nm
- The 2.5Gbps LVDS transceiver in GlobalFoundries LP/LP+ is designed for high-speed, low-power data transmission in radiation-intensive environments.
- Engineered with a Rad-Hard by Design approach, the Rad-Hard cells have been proton tested to 64 MeV with a flux exceeding 1.3E+09, and is latch-up proven to 200mA across -40C to 125C, ensuring robust immunity against TID, SEE, and SEL effects.
GF12 - 0.8V SLVS Rad-Hard Transceiver in GF 12nm
- This SLVS I/O Library delivers a robust, high-performance solution for high-speed differential signaling in GlobalFoundries 12nm process technology.
- Designed for optimal signal integrity, this 0.8V SLVS transceiver features fast rise and fall times, low propagation delay, and built-in pre-emphasis to enhance signal quality over longer traces.
- With support for data rates up to 3Gbps, it enables reliable, low-power communication while maintaining excellent noise immunity.
Tuneable multi-port register file architecture - TSMC 28HPC+
- Custom Register File Architecture
- Power savings >50%
- Wide operating voltage range
- Tuneable performance
- Single rail – interfaces directly to logic
- Supports multiple read/write ports
NVM OTP in GF (180nm, 130nm, 65nm, 55nm, 40nm, 28nm, 22nm, 12nm)