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Compare 1,053 IP for GLOBALFOUNDRIES from 61 vendors (1 - 10)
  • 32Gbps SerDes PHY in GF 22nm
    • This 32Gbps SerDes PHY is implemented in GlobalFoundries 22FDX CMOS technology and provides a high-performance, protocol-agnostic serial interface for advanced mixed-signal and high-speed digital SoCs.
    • The PHY is architected as a modular design consisting of a low-jitter clock multiplier, a half-rate transmitter with digitally programmable feed-forward equalization, and a configurable CTLE-based receiver with digital clock-and-data recovery, supporting both 16 Gbps and 32 Gbps operation.
    Block Diagram -- 32Gbps SerDes PHY in GF 22nm
  • Stand-Alone ESD Cell in GF 28nm
    • This ESD library is a silicon-proven set of discrete, pad-independent ESD clamps for GlobalFoundries 28nm technology.
    • The library is designed to provide robust ESD protection for power domains and low-speed signals in advanced SoCs where traditional pad-based protection is insufficient or impractical.
    Block Diagram -- Stand-Alone ESD Cell in GF 28nm
  • Single Port High-Speed Multi Bank SRAM Memory Compiler on GF 22FDX+
    • Ultra-Low Leakage - GLOBALFOUNDRIES low-leakage 6T L110 bit cells with High Vt and low leakage periphery to ensure minimal leakage and high yield.  
    • Multi-Bank Architecture - Memory split into 1 to 4 banks for reduced bit line length and enhanced timing. 
    • Ultra Low Power Standby - Built-in source biasing trims standby current to a minimum for data retention. 
    Block Diagram -- Single Port High-Speed Multi Bank SRAM Memory Compiler on GF 22FDX+
  • Dual Port Register File Compiler (1 Read-only port, 1 Write-only port) - GF 22FDX+
    • Uses 8T-TP185SL bit cells. 
    • Isolated Supplies: Periphery and array power domains can be independently powered down in standby mode. 
    • Deep Sleep Standby Mode: Memory retains data at minimal power via internal biasing. 
    Block Diagram -- Dual Port Register File Compiler (1 Read-only port, 1 Write-only port) - GF 22FDX+
  • Single Port Low Leakage SRAM Memory Compiler on GF 22FDX+
    • Ultra-Low Leakage: High VT (HVT) and low leakage (LLHVT) devices are used with source biasing to minimize standby currents while operating at low voltage 
    • Bit Cell: Utilizes GlobalFoundries®  Ultra-Low Leakage  6T (P110UL) bit cells to ensure high manufacturing yields 
    • Five Power Modes: High Performance, Low Leakage, Standby, Retention, and Power Off modes provide flexibility for power optimization 
    • Speed Grades: Three options to adjust the speed/leakage balance and optimize for high speed or low power operation 
    Block Diagram -- Single Port Low Leakage SRAM Memory Compiler on GF 22FDX+
  • Single Port Low Leakage Register File Compiler - GF 22FDX+
    • Ultra-Low Leakage: High VT (HVT) and low leakage HVT (LLHVT) devices used with source biasing to minimize standby currents while operating at low voltage. 
    • Bit Cell: Utilizes GlobalFoundries® Ultra-Low Leakage 6T (L110) bit cells to ensure high manufacturing yields.   
    • Four Power Modes: Active, Standby, Retention, and Power Off modes provide flexibility for power optimization 
    Block Diagram -- Single Port Low Leakage Register File Compiler - GF 22FDX+
  • Single Port Low Leakage SRAM Memory Compiler on GF 22FDX
    • Ultra-Low Leakage: High VT (HVT) and low leakage (LLHVT) devices are used with source biasing to minimize standby currents while operating at low voltage
    • Bit Cell: Utilizes GlobalFoundries®  Ultra-Low Leakage 6T (P110UL) bit cells to ensure high manufacturing yields
    • Five Power Modes: High Performance, Low Leakage, Standby, Retention, and Power Off modes provide flexibility for power optimization
    • Speed Grades: Three options to adjust the speed/leakage balance and optimize for high speed or low power operation
    Block Diagram -- Single Port Low Leakage SRAM Memory Compiler on GF 22FDX
  • Single Port Low Leakage Register File Compiler - GF 22FDX+
    • Ultra-Low Leakage: High VT (HVT) and low leakage HVT (LLHVT) devices used with source biasing to minimize standby currents while operating at low voltage 
    • Bit Cell: Utilizes GlobalFoundries® Ultra-Low Leakage 6T (P110UL) bit cells to ensure high manufacturing yields 
    • Four Power Modes: Active, Standby, Retention, and Power Off modes provide flexibility for power optimization 
    Block Diagram -- Single Port Low Leakage Register File Compiler - GF 22FDX+
  • Single Port Low Leakage SRAM Memory Compiler on GF 22FDX+
    • Ultra-Low Leakage: High VT (HVT) and low leakage (LLHVT) devices are used with source biasing to minimize standby currents while operating at low voltage 
    • Bit Cell: Utilizes GlobalFoundries®  Ultra-Low Leakage, 6T(L110) bit cells to ensure high manufacturing yields  
    • Five Power Modes: High Performance, Low Leakage, Standby, Retention, and Power Off modes provide flexibility for power optimization 
    Block Diagram -- Single Port Low Leakage SRAM Memory Compiler on GF 22FDX+
  • Single Port Low Leakage Register File Compiler - GF 22FDX
    • Ultra-Low Leakage: High VT (HVT) and low leakage HVT (LLHVT) devices used with source biasing to minimize standby currents while operating at low voltage 
    • Bit Cell: Utilizes GlobalFoundries® Ultra-Low Leakage 6T (P110UL) bit cells to ensure high manufacturing yields 
    • Four Power Modes: Active, Standby, Retention, and Power Off modes provide flexibility for power optimization 
    Block Diagram -- Single Port Low Leakage Register File Compiler - GF 22FDX
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