Memory & Libraries IP for GLOBALFOUNDRIES

A GlobalFoundries 180nm LPe Specialized 5V ESD Clamp.
A key attribute of this 5V Clamp is that it can be used for either signal protection or 1.8V power supplies.
The clamp is a single cell, 44um x 32um in size. It is built from the substrate to metal 6.

A radiation-hardened GlobalFoundries 12nm LP/LP+ Flip-Chip IO library with both 1.8V and 3.3V GPIO, fail-safe GPI, analog cell, and associated ESD. Also features an LDO optimized for use with 3.3V GPIO.
This radiation-hardened, by design, library features both a 1.8 and 3.3V GPIO with multiple drive strengths of 2mA, 4mA, 8mA, and 16mA, along with a full-speed output enable function.

A 3.3V wire-bond I/O library, a 1.2V ODIO and 5V tolerant ODIO.
This library is a production-quality, silicon-proven I/O library in GlobalFoundries 65/55nm technology.
The library offers a 3.3V GPIO with two selectable inputs, slew rate control, and an optional active tri-state, as well as a GPIO with an ultra-wide supply range and an optional glitch filter.

A GlobalFoundries 180nm BCD Lite Wirebond GPIO library with tri-state out- put driver, schmitt trigger receiver and associated ESD.
This silicon-proven, wirebond library in GlobalFoundries 180nm BCD lite is a specialty I/O similar to Soundwire.
Featuring a 1.5V to 3.3V GPIO, as well as a tri-state output driver, an analog test point switch, and 7V OTP mode.

The 2.5Gbps LVDS transceiver in GlobalFoundries LP/LP+ is designed for high-speed, low-power data transmission in radiation-intensive environments.
Engineered with a Rad-Hard by Design approach, the Rad-Hard cells have been proton tested to 64 MeV with a flux exceeding 1.3E+09, and is latch-up proven to 200mA across -40C to 125C, ensuring robust immunity against TID, SEE, and SEL effects.

This SLVS I/O Library delivers a robust, high-performance solution for high-speed differential signaling in GlobalFoundries 12nm process technology.
Designed for optimal signal integrity, this 0.8V SLVS transceiver features fast rise and fall times, low propagation delay, and built-in pre-emphasis to enhance signal quality over longer traces.
With support for data rates up to 3Gbps, it enables reliable, low-power communication while maintaining excellent noise immunity.

Global Foundries Embedded EEPROM 0.13 um
1056 Byte of available memory 8(bit per word) x 16(words per page) x 66(pages) bit
High density of memory cells
Writing and erasing data by one high-voltage pulse

GlobalFoundries Embedded EEPROM 0.13 um
2048bit of available memory 16(bit per word) × 8(words per page) × 16(pages) bit