Register File with low power retention mode and 3 speed options

Overview

Low Leakage. Mobile Semiconductor's RF1P-ULL-GF22FDX memory compiler generates single-port Register File instances using the GLOBALFOUNDRIES 22nm FDX CMOS process. Each ultra-low leakage memory instance primarily uses low leakage HVT (LLHVT) devices and source biasing to minimize standby current. Read and write assist circuits ensure reliable operations with a periphery power supply as low as 0.72V.

Key Features

Ultra low power data retention. Memory instances generated by the RF1P-ULL-GF22FDX go into a deep sleep mode that retains data at minimal power consumption.
Self biasing. The RF1P-ULL-GF28FDX internal self-biasing capabilities provide ease of IP integration.
High yield. To ensure high manufacturing yield, the RF1P-ULL-GF22FDX utilizes GLOBALFOUNDRIES’ low leakage 6T (0.110µ2) bit cells and is consistent with Design for Manufacturing (DFM) guidelines for the 22nm FDX process.
High usability. All signal and power pins are available on metal 4 while maintaining routing porosity in metal 4. Power pins can optionally be made available on metal 5 to simplify the power connections at the chip level.

Benefits

Low Power, high yield

Deliverables

Register File Compiler up to 72Kb
EDA Vies
Verilog Test Bench
Tessent BIST Synthesis Control

Technical Specifications

Foundry, Node

GF 22FDX

Maturity

Qualified in Volume Production

Availability

NOW

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