Low power, high speed, and high density configurable Double Density SRAM

Overview

Novelics coolSRAM-1T embedded memory IP is the industry’s only siliconproven, single transistor SRAM IP solution that can be implemented in a bulk logic CMOS process without requiring additional masks or manufacturing steps. Use of coolSRAM-1T lowers overall system level cost and power consumption by reducing both the area of standard embedded SRAM and the number of external components.

Based on Novelics’ patented SRAM-1T technology, coolSRAM-1T is an ideal solution for high density SRAM integration in ASICs, ASSPs, VLSI and Systemon- Chip (SoC) applications. Embedded coolSRAM-1T blocks are custom configured by the designer and compiled to meet the design specifications, providing an unprecedented mix of low power and high density to minimize total system cost.

coolSRAM-1T IP requires only an unmodified standard logic CMOS process and therefore does not introduce additional manufacturing cost. Other single transistor SRAM offerings available on the market today require process modifications in the form of additional masks and additional manufacturing layers. These requirements can add up to 20% to the wafer cost and make other single transistor SRAM solutions not justifiable for a majority of the designs. Use of coolSRAM-1T IP even for a small amount of embedded memory can lower silicon cost significantly by reducing die size.

With the ability to reduce the die area by typically more than 25%, manufacturing yield can also be maximized. By incorporating coolSRAM-1T the design benefits from either a 50% increase in available logic area or 25% reduction in chip area for the typical SoC.

Key Features

  • Based on patent-pending 1T cell design
  • Implemented with unmodified standard CMOS logic process
  • Best-in-class active power, leakage current, density, and speed
  • Supports large instances (e.g. 32Mbit)
  • Selectable process nodes, power, speed, and aspect ratio
  • Selectable row/column redundancy
  • Advanced power management modes
  • Ideal for portable applications requiring ultra low power at high densities and high speed applications that can benefit from advanced power management features
  • Flexible IP Licensing Models

Benefits

  • Customer architected through the MemQuest memory compiler and characterization tool
  • Circuits based on patented Novelics circuits and 1T cell design
  • Standard, unmodified Logic CMOS process
  • Typically twice the density of standard 6T SRAM
  • Reliable operation and performance well beyond normal Process / Voltage / Temperature variations
  • Higher yield than 6T due to stable circuits, smaller die area and fewer transistors
  • Very low leakage current
  • Supports large instances
  • Bit and byte write options
  • Configurable for column and/or row redundancy
  • Offered in leading-edge process nodes at major foundries
  • Support for SVT & HVT transistors

Technical Specifications

Availability
Now
TSMC
In Production: 130nm G
Pre-Silicon: 40nm G
Silicon Proven: 65nm G , 90nm G
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Semiconductor IP