RAM IP
Welcome to the ultimate RAM IP hub! Explore our vast directory of RAM IP
All offers in
RAM IP
Filter
Compare
409
RAM IP
from 26 vendors
(1
-
10)
-
Low Power Memory Compiler - Single Port SRAM - GF 22nm FDX
- Silicon proven Single Port SRAM compiler for GF22 FDX - Memory optimized for low power and supports body biasing.
-
MRAM Synthesizable Transactor
- Supports all the MRAM commands as per the MR2A16A and MR0A08B specifications.
- Supports Symmetrical high-speed read and write with fast access time.
- Supports SRAM Compatible timing
- Supports native non-volatility
-
Ultra Low Power Embedded SRAM - Samsung 28FDSOI
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line – subdividing the array into columns/ rows, banks and local blocks.
- Configurable mux factor sets column length and overall aspect ratio
- Bit Line Voltage control eliminates potential low operating voltages issues
-
Ultra Low Power Embedded SRAM - TSMC 22ULL
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line – subdividing the array into columns/ rows, banks and local blocks.
- Configurable mux factor sets column length and overall aspect ratio
- Bit Line Voltage control eliminates potential low operating voltages issues
-
Ultra Low Voltage Embedded SRAM - TSMC 22ULL
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
- ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
- Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
-
Ultra Low Power Embedded SRAM - TSMC 28HPC+
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line – subdividing the array into columns/ rows, banks and local blocks.
- Configurable mux factor sets column length and overall aspect ratio
- Bit Line Voltage control eliminates potential low operating voltages issues
-
Ultra Low Voltage Embedded SRAM - TSMC 28HPC+
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
- ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
- Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
-
Ultra Low Voltage Embedded SRAM - TSMC 40ULP
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
- ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
- Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
-
SmartMem Subsystem IP
- Fully synthesizable and configurable memory subsystem IP that enables significant improvement in power, performance and endurance not only for NuRAM but also other third party MRAMs as well as RRAM, PCRAM and Flash
-
Low Power Memory IP
- State-of-the-art, patented memory technology based on industry proven MRAM.
- Fast access times and extremely low leakage power make it an attractive upgrade to traditional SRAM or nvRAM as well as embedded Flash.
