AFE IP

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Compare 63 IP from 25 vendors (1 - 10)
  • Ultra Low-Power High-Performance AFE on TSMC 16nm
    • The ODT-AFE-8D8IF-12FFCT is an ultra-highperformance AFE designed in a TSMC 16nm process. The AFE includes 8 DACs along with 8 interpolation filters.
    • This AFE has a voltage/current reference, a clock receiver circuit and a Temperature & Voltage monitor.
  • Ultra Low-Power High-Performance AFE on GF 22FDX
    • The ODT-AFE-2T2R-GF22FDX is an ultra-highperformance AFE designed in a Global Foundries 22nm process.
    • The AFE includes two 12-bit, 4GSPS I/Q ADC pairs, two 14-bit, 8GSPS I/Q DAC pairs, four capless LDOs, one Bandgap reference and one temperature sensor and includes an integrated 3rd party PLL.
    Block Diagram -- Ultra Low-Power High-Performance AFE on GF 22FDX
  • 24-bit Analog fromt end (AFE) product having sigma delta ADC for weighing scale, Strain Guage, Sensor application
    • Low power AFE having 24b ADC and PGA with integrated reference and internal oscillator
    • PGA having gain of 1, 2, 4, 8, 16, 32, 64, 128
    • Three power modes with output Data Rates From 1 To 19.2kSPS
    • High Performance:
  • Ultra Low-Power High-Performance AFE in 12nm
    • The ODT-AFE-1T1R-12 is an ultra-high-performance AFE designed in a 12nm process.
    • The AFE includes 1 IQ Pairs of Tx and Rx for either the FR1 or FR2 band. This is comprised of two 12-bit 2GSPS ADCs, and two 12-bit 2GSPS DACs.
    • This AFE also includes multiple capless LDOs, a voltage/current reference, and a low jitter 2 GHz PLL

     

    Block Diagram -- Ultra Low-Power High-Performance AFE in 12nm
  • Ultra Low-Power High-Performance AFE on 12nm
    • The ODT-AFE-4T4R-12nm is an ultra-high-performance AFE designed in a 12nm CMOS process.
    • The AFE includes 2 IQ Pairs of Tx and Rx for the FR2 band, and combines them with 2 additional IQ Pairs of Tx and Rx for the FR1 band clocked at a lower sample rate.
    Block Diagram -- Ultra Low-Power High-Performance AFE on 12nm
  • Highly-integrated AFE with 16 ADCs and 18 DACs on TSMC 16nm FFC
    • The ODT-AFE-16A18D4T-16FFCT is a highly integrated AFE designed in a 16nm CMOS process.
    • The AFE includes sixteen 12-bit, 200MSPS ADCs, eight voltage DACs with an output settling time of 1us, six voltage DACs with an output settling time of 10us, four 250MSPS current DACs, four TV monitors, multiple LDOs and reference generators, and an output voltage buffer.
    • The various IP architectures are optimized to maximize performance while minimizing power and area consumption.
  • 6-bit, 1 GSPS High Performance AFE in 28nm CMOS
    • The ODT-AFE-6B1G-28HPCPT is a highperformance I/Q ADC and I/Q DAC designed in a 28nm CMOS process.
    • The 6-bit, 1.056GSPS I/Q ADC supports input signals up to 400 MHz and features a differential full-scale range of 0.6Vpp and excellent static and dynamic performance.
    • The ADC architecture is optimized to maximize performance while minimizing power and area consumption.
    Block Diagram -- 6-bit, 1 GSPS High Performance AFE in 28nm CMOS
  • 14-bit, 1200 MSPS Ultra Low Power AFE in 28nm CMOS
    • 14-bit resolution, sampling rate up to 1200 MSPS
    • Fully differential operation, fully specified from -40C to 125C
    • Ultra low power dissipation with patented SWIFT technology
    • SFDR > 70, ENOB > 10.5 bits
  • 40nm 1.1V AFE comprising 12-bit IQ ADC, 12-bit IQ DAC and Clock-PLL
    • Rail-to-Rail IQ ADC Input Capability
    • 65dB IQ ADC SNR
    • Programmable Full-Scale IQ DAC Output Current
    • 65dB IQ DAC SNR
    Block Diagram -- 40nm 1.1V AFE comprising 12-bit IQ ADC, 12-bit IQ DAC and Clock-PLL
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Semiconductor IP