ESD Solutions for Multi-Gigabit SerDes in TSMC 28nm

Overview

A Wirebond and FlipChip compatible <80fF ESD Solutions for Multi-Gigabit SerDes Applications.

This silicon-proven TSMC 28nm Digital I/O Library delivers a low-capacitance, high-reliability interface solution optimized for advanced semiconductor applications. Featuring low-capacitance LVDS differential pairs (<250fF per pin) at 0.8V, this library ensures superior signal integrity for high-speed applications. The I/O macro seamlessly integrates with the TSMC 1.0V I/O Library, sharing a compatible VDDA and VSSA bus structure for streamlined power management. Designed with a 14-bondpad ESD macro, including two differential pairs and dedicated power/ground cells, it provides a robust 0.8V VDDA power domain with a 0V ground reference. Engineered for reliability, the library avoids minimum-width metal traces and adheres to enhanced via/contact recommendations for long-term durability. With Cadence OA database compatibility, the library supports Spectre and auCdl views, enabling seamless simulation, LVS verification, and integration into standard design flows.

Cell List

Cell Name Description
WD_TXRXMAC_EW MACRO w/ E/W Poly
WD_TXRXMAC_NS MACRO w/ N/S Poly

 Common Digital PINS

PIN Function Voltage
VDDA 0.8V Core Voltage 0.8V
VDDA Ground reference & substrate 0V
TX, RX Low Cap Signal Pad 0.8V


 Physical Dimensions

  •  14 Bondpads
  •  2 Pairs of Low-Cap Signals
  •  55um Pitch
  •  770um wide and 130um tall

 

Key Features

  • Provide Low-Cap Bondpads for differential pair, at a nominal voltage of 0 to 0.8V
  •  Low Capacitance to be <250fF per pin.
  • Designed to intergrate with the TSMC 1.0V I/O Library
  • Uses the same VDDA and VSSA bus structures

Block Diagram

ESD Solutions for Multi-Gigabit SerDes in TSMC 28nm Block Diagram

Technical Specifications

Foundry, Node
TSMC 28nm
TSMC
Pre-Silicon: 28nm
×
Semiconductor IP