A 28nm 1.8V-3.3V Fail-Safe General-Purpose IO & OSC

Overview

This 28nm GPIO is designed for high-speed (>150MHz output, >250MHz input) applications. The IO operates at either 1.8V or 3.3V and can dynamically switch between these voltages during operation. The cell is power sequence-independent and is fully self-protecting during the power ramp. A unique feature of the 28nm GPIO is its fail-safe capability. Though a full push-pull IO, the part can be powered down and leak low current from externally driven active signals, much like an open-drain IO.

Built into our IO libraries and also offered as a separate service is our strong ESD expertise. Certus was founded by ESD engineers, and our results speak for themselves. We consistently exceed 2KV HBM and 500V CDM ESD targets and provide on-chip solutions for standards such as IEC-61000-4-2, system-level ESD, and Cable Discharge Events (CDE).

Certus supports IO libraries across multiple TSMC nodes, including 180nm, 130nm, 40nm, 28nm, 22nm, and 16/12nm. Certus is particularly suited at providing custom variants in a cost-efficient framework. Please contact us for supplementary physical or electrical features that can suit your needs.

Key Features

Fail-Safe GPIO in TSMC 28nm process technology

JEDEC LVCMOS compliant
RGMII, SD capable
1.8V-3.3V dynamic multi-voltage operation
Selectable drive strengths
Selectable input hysteresis
20um pitch, 180um tall cell
Triple-row staggered wirebond pad arrangement
>2kV HBM, 500V CDM ESD

Physical features

20um x 186um cell size
9 metals - 6X2Z
20um pitch, triple row staggered wirebond

This library also features a 33MHz OSC (3.3V).

Benefits

Tight cell pitch
Small footprint triple staggered wirebond
Fast GPIO
Fail-Safe IO
Power sequence independence
Selectable input hysteresis
Proven HBM & CDM ESD protection

Block Diagram

Applications

General Purpose Applications
Memory interfaces
Open-Drain IO applications
RGMII
FLASH and SD Card interfaces
UARTS

Deliverables

GDS
CDL netlist
Verilog stub
Verilog behavioral model
LEF
Liberty Timing Files
IBIS (option)
Electrical datasheet
User guide and application notes
Consulting and Support

Technical Specifications

Foundry, Node

28nm

Maturity

Silicon Proven

Availability

Immediate

TSMC

In Production: 28nm HP , 28nm HPC , 28nm HPCP , 28nm HPL , 28nm HPM , 28nm LP
Pre-Silicon: 28nm HP , 28nm HPC , 28nm HPCP , 28nm HPL , 28nm HPM , 28nm LP
Silicon Proven: 28nm HP , 28nm HPC , 28nm HPCP , 28nm HPL , 28nm HPM , 28nm LP

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