UMC claims foundry technology lead with copper SRAM made with 0.13-micron process

UMC claims foundry technology lead with copper SRAM made with 0.13-micron process
By Semiconductor Business News
May 12, 2000 (12:20 p.m. EST)
URL: http://www.eetimes.com/story/OEG20000512S0017

SANTA CLARA, Calif. -- Taiwan's United Microelectronics Corp. here today announced it has produced fully functional 2-megabit SRAM devices a 0.13-micron logic process technology features copper interconnects.

During UMC's annual technology forum in Silicon Valley, the silicon foundry said it verified production yields of the SRAM chips on May 2 after taping out the design during the first quarter this year. The company also said the 0.13-micron process actually features 0.10-micron gate lengths in transistors and copper interconnects on all layers of wiring.

"This milestone puts UMC on the map as the frontrunner with the introduction of advanced logic production technologies," declared Fu Tai Liou, chief technical officer of the pure-play foundry company based in Hsinchu, Taiwan. "We have produced fully functional SRAM chips with natural good die yield almost a full year ahead of the roadmaps of the majority of other semiconductor industry leaders."

Consequently, UMC claimed it has taken the lead in the race among foundry companies to deliver technology with all copper interconnects and gate lengths of 0.10 micron. However, UMC indicated that it has not yet placed the 0.13-micron process technology into pilot production. That will happen before the end of the year, said the company.

But the new logic process has produced the world's smallest SRAM storage cell made with six-transistors, according to UMC. The memory cell is 2.28 microns², the company said.