Startup Describes Proprietary Non-Volatile Memory Technology
Peter Clarke, Electronics360
03 March 2014
4DS Inc., a subsidiary of an Australian company called 4DS Pty. Ltd., has been working on non-volatile memory technology since 2007. In December 2013 4DS appointed Guido Arnout, an experienced Silicon Valley semiconductor executive as CEO to lead the commericialization of its so-called MOHJO ReRAM technology. MOHJO stands for metal-oxide heterojunction operation.
This puts 4DS in the same camp as the Symetrix Corp. (Colorado Springs, Colorado) which is working on the development of a non-filamentary, non-volatile memory technology based on the metal-insulator Mott transition in nickel oxide and other transition metal oxides (TMOs).
To read the full article, click here
Related Semiconductor IP
- NVM OTP in Huali (40nm, 28nm)
- NVM OTP in Tower (180nm, 110nm)
- NVM OTP in GF (180nm, 130nm, 65nm, 55nm, 40nm, 28nm, 22nm, 12nm)
- NVM MTP in Samsung (130nm)
- NVM MTP in GF (180nm, 55nm)
Related News
- NSCore, Inc. Introduces its Automotive Grade-1 Qualified Non-Volatile Memory solution to help address the increasing need for Low Cost Semiconductor Chips
- Non-Volatile Memory: What Will 2023 Bring?
- Raaam signs lead licensee for SRAM replacement technology
- JEDEC® Adds to Suite of Standards Supporting Compute Express Link® (CXL®) Memory Technology with Publication of Two New Documents
Latest News
- How CXL 3.1 and PCIe 6.2 are Redefining Compute Efficiency
- Secure-IC at Computex 2025: Enabling Trust in AI, Chiplets, and Quantum-Ready Systems
- Automotive Industry Charts New Course with RISC-V
- Xiphera Partners with Siemens Cre8Ventures to Strengthen Automotive Security and Support EU Chips Act Sovereignty Goals
- NY CREATES and Fraunhofer Institute Announce Joint Development Agreement to Advance Memory Devices at the 300mm Wafer Scale