iPhone X's TrueDepth Module Dissected
Why Apple wanted ST's NIR sensors to use SOI
11/17/2017 00:01 AM EST
PARIS — Although experts in the imaging industry are aware of a complex “TrueDepth” module that Apple has devised for its iPhone X, most other details inside the device’s 3D system — chips, components, and all the way down to substrates — remain a deep, dark secret.
EE Times talked to Yole Développement, which completed this week a teardown of Apple iPhone X TrueDepth module in collaboration with its partner, System Plus Consulting. They deduced that silicon-on-insulator (SOI) wafers are being used in near-infrared (NIR) imaging sensors. They noted that SOI has played a key role in improving the sensitivity of NIR sensors — developed by STMicroelectronics — to meet Apple’s stringent demands.
Pierre Cambou, activity leader for imaging and sensors at Yole Développement, called the SOI-based NIR image sensors “a very interesting milestone for SOI.”
To read the full article, click here
Related Semiconductor IP
- UCIe D2D Adapter & PHY Integrated IP
- Low Dropout (LDO) Regulator
- 16-Bit xSPI PSRAM PHY
- ASIL B Compliant MIPI CSI-2 CSE2 Security Module
- SHA-256 Secure Hash Algorithm IP Core
Related News
- iPhone X chip shows problems of Imagination
- iPhone X Costs Apple Nearly $370 in Materials, IHS Markit Teardown Reveals
- SuperH names executives at RISC chip venture between Hitachi and STMicro
- Parthus and STMicro team on Bluetooth RF
Latest News
- Sofics and Alcyon Photonics Partner to Support Next-Generation Photonic Systems
- QuickLogic Appoints Quantum Leap Solutions as Authorized Sales Representative
- Cadence and NVIDIA Expand Partnership to Reinvent Engineering for the Age of AI and Accelerated Computing
- Cadence and Google Collaborate to Scale AI-Driven Chip Design with ChipStack AI Super Agent on Google Cloud
- Analog Bits Demonstrates Real-Time On-Chip Power Sensing and Delivery on TSMC N2P Process at TSMC 2026 Technology Symposiums