Intel: 450-mm wafers must wait on 10-nm
Peter Clarke, EETimes
2/28/2011 3:39 PM EST
GRENOBLE, France – The 10-nm process node appears to be the ideal point for the adoption of manufacturing on 450-mm diameter wafers, according Leonard Hobbs, head of research for Intel Ireland. Speaking at the Industry Strategy Symposium here (ISS Europe) he also indicated that the transition could not come sooner and could be pushed later, depending on the efficacy of industry collaboration.
Hobbs portrayed the transition taking place 2015 to 2017.
To read the full article, click here
Related Semiconductor IP
- HBM4 PHY IP
- Ultra-Low-Power LPDDR3/LPDDR2/DDR3L Combo Subsystem
- MIPI D-PHY and FPD-Link (LVDS) Combinational Transmitter for TSMC 22nm ULP
- HBM4 Controller IP
- IPSEC AES-256-GCM (Standalone IPsec)
Related News
- SJSemi and Qualcomm Jointly Announce Qualification of 10nm Ultra-high Density Wafer Bumping Technology
- Commentary: Get ready for 450-mm fabs
- Intel, Samsung Electronics and TSMC Reach Agreement for 450mm Wafer Manufacturing Transition
- UMC tips roadmap, questions 450-mm
Latest News
- AI Directs UFS Advancement
- Qualitas Semiconductor Expands Automotive Momentum with 5nm IP Bundle Agreement
- Cyient Semiconductors Acquires Majority Stake in Kinetic Technologies to Drive Custom Power IC Leadership for Edge AI and High-Performance Compute Markets
- Rivian Unveils Custom Silicon, Next-Gen Autonomy Platform, and Deep AI Integration
- NanoXplore raises €20 million from MBDA and Bpifrance to accelerate its diversification into defense and its growth in support of European strategic sovereignty