Globalfoundries, TSMC square off in litho
Mark LaPedus, EETimes
3/1/2011 6:37 PM EST
SAN JOSE, Calif. – It’s a clash of the titans in the foundry industry between Globalfoundries Inc. and Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC).
The silicon foundry rivals are separately expanding their process offerings and services for customers, but they have different strategies to knock each other off from their respective perches.
For example, Globalfoundries has a high-k/metal-gate only offering for the gate stack at 28-nm. In contrast, TSMC is offering both a high-k/metal-gate and polysilicon gate-stack options at the node. TSMC is pushing hard for 450-mm fabs. Globalfoundries and other members of IBM Corp.’s ''fab club’’ have been less vocal about 450-mm.
To read the full article, click here
Related Semiconductor IP
- Multi-channel, multi-rate Ethernet aggregator - 10G to 400G AX (e.g., AI)
- Multi-channel, multi-rate Ethernet aggregator - 10G to 800G DX
- 200G/400G/800G Ethernet PCS/FEC
- 50G/100G MAC/PCS/FEC
- 25G/10G/SGMII/ 1000BASE-X PCS and MAC
Related News
- TSMC and Synopsys Bring Breakthrough NVIDIA Computational Lithography Platform to Production
- TSMC shuns high-NA EUV lithography
- Cadence Extends DFM Solution with Acquisition of Design-side Litho and Variability Leader Clear Shape Technologies
- TSMC's R&D boss addresses 40-nm yields, high-k, litho
Latest News
- How CXL 3.1 and PCIe 6.2 are Redefining Compute Efficiency
- Secure-IC at Computex 2025: Enabling Trust in AI, Chiplets, and Quantum-Ready Systems
- Automotive Industry Charts New Course with RISC-V
- Xiphera Partners with Siemens Cre8Ventures to Strengthen Automotive Security and Support EU Chips Act Sovereignty Goals
- NY CREATES and Fraunhofer Institute Announce Joint Development Agreement to Advance Memory Devices at the 300mm Wafer Scale