China's Tsinghua Launches DRAM Unit
By Dylan McGrath, EETimes
July 2, 2019
SAN FRANCISCO — Chinese government-backed Tsinghua Unigroup has established a new DRAM unit in a renewed push to achieve semiconductor independence amid ongoing friction with the U.S.
The new memory unit is led by CEO Charles Kao, chairman of Inotera Memories and former president of Nanya Technology, both of which make DRAM. Kao is also chairman of Yangtze Memory Technology (YMTC), another Tsinghua Unigroup venture attempting to produce NAND flash memory.
To read the full article, click here
Related Semiconductor IP
- Low Latency DRAM Synthesizable Transactor
- Low Latency DRAM Memory Model
- Embedded OTP (One-Time Programmable) IP, 2Kx32 bits for 1.0V/2.6V DRAM
- Embedded OTP (One-Time Programmable) IP, 4Kx32 bits for 1.2V/2.5V DRAM
- DDR2-PHY command/address block for DRAM chip, BOAC ; UMC 90nm SP/RVT Low-K Logic Process
Related News
- UMC retreats from China DRAM venture, Report says
- Intel ASIC unit to focus on comms chips and is building a network of third-party intellectual-property suppliers to support the effort
- Philips Semi, Cadence's Tality unit team up in Bluetooth solutions
- LSI Logic Licenses Synthesizable ARM926EJ-S Core With a Memory Management Unit and Java Support
Latest News
- Virtusa Acquires Bengaluru based SmartSoC Solutions, Establishing Full-Stack Service Offering from Chip to Cloud and Driving Expansion into the Semiconductor Industry
- Consumer Electronics and AI Product Launches Lift 3Q25 Top-10 Foundry Revenue by 8.1%, Says TrendForce
- Joachim Kunkel Joins Quadric Board of Directors
- RaiderChip NPU leads edge LLM benchmarks against GPUs and CPUs in academic research paper
- SEMIFIVE Secures AI Semiconductor Design Projects in Japan, Accelerating Global Expansion with New Local Subsidiary