Acacia Subsidiary Acquires Additional Patents from Renesas Electronics Corporation
NEWPORT BEACH, Calif.-- September 22, 2016 -- Acacia Research Corporation (NASDAQ: ACTG) announced today that a subsidiary has acquired an additional portfolio of semiconductor patents from Renesas Electronics Corporation. These patents relate to Power Management, System-on-Chip System Architecture and Device Manufacturing Processes and Packaging.
ABOUT ACACIA RESEARCH CORPORATION
Founded in 1993, Acacia Research Corporation (NASDAQ: ACTG) is the industry leader in patent licensing. An intermediary in the patent marketplace, Acacia partners with inventors and patent owners to unlock the financial value in their patented inventions. Acacia bridges the gap between invention and application, facilitating efficiency and delivering monetary rewards to the patent owner.
For more information, visit: http://acaciaresearch.com
Related Semiconductor IP
- Multi-channel, multi-rate Ethernet aggregator - 10G to 400G AX (e.g., AI)
- Multi-channel, multi-rate Ethernet aggregator - 10G to 800G DX
- 200G/400G/800G Ethernet PCS/FEC
- 50G/100G MAC/PCS/FEC
- 25G/10G/SGMII/ 1000BASE-X PCS and MAC
Related News
- Acacia Technologies Purchases 3 Patent Portfolios with 36 Patents Relating to Flash Memory, Computer Graphics and DRAM from Alliance Semiconductor
- Acacia Subsidiary Acquires 65 Patents Covering DRAM Technologies from a Major Semiconductor Company
- Acacia Subsidiary Partners With a Leading Semiconductor Company on Patents Related to DisplayPort and MIPI DSI
- Acacia Technologies Initiates Patent Infringement Lawsuit against Intel and Texas Instruments
Latest News
- How CXL 3.1 and PCIe 6.2 are Redefining Compute Efficiency
- Secure-IC at Computex 2025: Enabling Trust in AI, Chiplets, and Quantum-Ready Systems
- Automotive Industry Charts New Course with RISC-V
- Xiphera Partners with Siemens Cre8Ventures to Strengthen Automotive Security and Support EU Chips Act Sovereignty Goals
- NY CREATES and Fraunhofer Institute Announce Joint Development Agreement to Advance Memory Devices at the 300mm Wafer Scale