SRAM on Samsung 28nm FDS IP
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ONFI 4.1 NAND Flash Controller & PHY & IO Pads on 28nm
- Page Size – 2KB, 4KB, 8KB, 16KB
- Bank/chip select options
- Programmable timing
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LPDDR4X multiPHY in Samsung (14nm, 11nm)
- Low latency, small area, low power
- Compatible with JEDEC standard LPDDR4 SDRAMs up to 4,267 Mbps
- Maximum data rate is process technology dependent
- Compatible with JEDEC standard DDR4 SDRAMs up to 3,200 Mbps
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LPDDR4 multiPHY V2 in Samsung (8nm) for Automotive
- Low latency, small area, low power
- Compatible with JEDEC standard LPDDR4 SDRAMs up to 4,267 Mbps
- Maximum data rate is process technology dependent
- Compatible with JEDEC standard DDR4 SDRAMs up to 3,200 Mbps
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LPDDR4 multiPHY V2 in Samsung (14nm, 11nm, 10nm, 8nm)
- Low latency, small area, low power
- Compatible with JEDEC standard LPDDR4 SDRAMs up to 4,267 Mbps
- Maximum data rate is process technology dependent
- Compatible with JEDEC standard DDR4 SDRAMs up to 3,200 Mbps
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DDR4/3 PHY in Samsung (14nm, 11nm, 10nm, 8nm)
- Low latency, small area, low power
- Compatible with JEDEC standard DDR4 SDRAMs up to 3200 Mbps
- Compatible with JEDEC standard DDR3 or DDR3L SDRAMs up to 2133 Mbps
- DFI 4.0 compliant interface to the memory controller
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DDR4 multiPHY in Samsung (14nm)
- Low latency, small area, low power
- Compatible with JEDEC standard DDR4 up to 2667 Mbps
- Compatible with JEDEC standard DDR3 SDRAMs up to 2133 Mbps
- Compatible with JEDEC standard LPDDR2 SDRAMs up to 1066 Mbps