SRAM on Samsung 28nm FDS IP

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Compare 5 IP from 1 vendors (1 - 5)

LPDDR4X multiPHY in Samsung (14nm, 11nm)
- Low latency, small area, low power
- Compatible with JEDEC standard LPDDR4 SDRAMs up to 4,267 Mbps
- Maximum data rate is process technology dependent
- Compatible with JEDEC standard DDR4 SDRAMs up to 3,200 Mbps
LPDDR4 multiPHY V2 in Samsung (8nm) for Automotive
- Low latency, small area, low power
- Compatible with JEDEC standard LPDDR4 SDRAMs up to 4,267 Mbps
- Maximum data rate is process technology dependent
- Compatible with JEDEC standard DDR4 SDRAMs up to 3,200 Mbps
LPDDR4 multiPHY V2 in Samsung (14nm, 11nm, 10nm, 8nm)
- Low latency, small area, low power
- Compatible with JEDEC standard LPDDR4 SDRAMs up to 4,267 Mbps
- Maximum data rate is process technology dependent
- Compatible with JEDEC standard DDR4 SDRAMs up to 3,200 Mbps
DDR4/3 PHY in Samsung (14nm, 11nm, 10nm, 8nm)
- Low latency, small area, low power
- Compatible with JEDEC standard DDR4 SDRAMs up to 3200 Mbps
- Compatible with JEDEC standard DDR3 or DDR3L SDRAMs up to 2133 Mbps
- DFI 4.0 compliant interface to the memory controller
DDR4 multiPHY in Samsung (14nm)
- Low latency, small area, low power
- Compatible with JEDEC standard DDR4 up to 2667 Mbps
- Compatible with JEDEC standard DDR3 SDRAMs up to 2133 Mbps
- Compatible with JEDEC standard LPDDR2 SDRAMs up to 1066 Mbps