Low Leakage SRAM Compiler IP
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Single Port Low Leakage SRAM Memory Compiler on GF 22FDX+
- Ultra-Low Leakage: High VT (HVT) and low leakage (LLHVT) devices are used with source biasing to minimize standby currents while operating at low voltage
- Bit Cell: Utilizes GlobalFoundries® Ultra-Low Leakage, 6T(L110) bit cells to ensure high manufacturing yields
- Five Power Modes: High Performance, Low Leakage, Standby, Retention, and Power Off modes provide flexibility for power optimization
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Single Port Low Leakage SRAM Memory Compiler on GF 22FDX+
- Ultra-Low Leakage: High VT (HVT) and low leakage (LLHVT) devices are used with source biasing to minimize standby currents while operating at low voltage
- Bit Cell: Utilizes GlobalFoundries® Ultra-Low Leakage 6T (P110UL) bit cells to ensure high manufacturing yields
- Five Power Modes: High Performance, Low Leakage, Standby, Retention, and Power Off modes provide flexibility for power optimization
- Speed Grades: Three options to adjust the speed/leakage balance and optimize for high speed or low power operation
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Single Port Low Leakage SRAM Memory Compiler on GF 22FDX
- Ultra-Low Leakage: High VT (HVT) and low leakage (LLHVT) devices are used with source biasing to minimize standby currents while operating at low voltage
- Bit Cell: Utilizes GlobalFoundries® Ultra-Low Leakage 6T (P110UL) bit cells to ensure high manufacturing yields
- Five Power Modes: High Performance, Low Leakage, Standby, Retention, and Power Off modes provide flexibility for power optimization
- Speed Grades: Three options to adjust the speed/leakage balance and optimize for high speed or low power operation
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Single Port SRAM compiler - Memory optimized for ultra low leakage and high density - Dual Voltage - compiler range up to 640 k
- Available for Free Download and Use
- Source biasing implementation for ultra low leakage
- 4 times less leakage compared to stand by mode
- 3 times less leakage compared to retention mode
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Single Port Low Voltage SRAM Memory Compiler on N22ULL - Low Power Retention and Column Repair
- Ultra-Low Leakage: High VT (HVT) are used to minimize leakage performance
- Bit Cell: Utilizes Low Leakage 6T bit cells to ensure high manufacturing yields
- Ultra Low Power Standby: Internally generated bias voltage for low leakage data retention
- Isolated Array and Periphery supplies: Periphery voltage can be shut off to further reduce standby power
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Single Port Low Voltage SRAM Memory Compiler on N22ULL
- Ultra-Low Leakage: High VT (HVT) are used to minimize leakage performance
- Bit Cell: Utilizes Low Leakage 6T bit cells to ensure high manufacturing yields
- Ultra Low Power Standby: Internally generated bias voltage for low leakage data retention
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Low Power Memory Compiler - Single Port SRAM - GF 22nm FDX
- Silicon proven Single Port SRAM compiler for GF22 FDX - Memory optimized for low power and supports body biasing.
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Single Port SRAM compiler - Memory optimized for ultra low power and high density - Dual Voltage - compiler range up to 512 k
- Reduced die cost
- Pushed rule bit cell from foundry
- Ultra low power
- Low voltage operation down to 1.2 V
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Single Port SRAM compiler - Memory optimized for ultra low power and high density - Dual Voltage - compiler range up to 512 k
- Reduced die cost
- Pushed rule bit cell from foundry
- Ultra low power
- Low voltage operation down to 1.2 V