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for TSMC
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Over-voltage Protection Module to handle Over-voltage operation (up to 5.5 V) while using standard process 3.3 V devices
- Over-voltage protection biasing for embedded regulators
- Avoids expensive solutions while enabling direct baterry connection.
- Built-in over-voltage protection (up to 5.5 V) using 3.3 V transistors
- Over-voltage power range: 1.9 V to 5.5 V
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PUF
- Root of trust, unclonable, chip dependent ID with unique static and dynamic signature behavior in each chip
- Process dependent, fully invisible, root of trust
- Support 0.18um, 0.13um, 55nm, 40nm, 28nm, 14nm
- Small Area: 0.02mm2 (140um x 140um) @SMIC 55nm
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DP/eDP1.4/1.2 TX PHY&controller
- Area: 0.75mm2 with pixel PLL and 0.63mm2 without pixel PLL including IO and ESD
- Compliant with DP1.4 and eDP1.4specification
- Typical 27MHz reference clock
- Supports 1/2/4-lane configuration
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DP1.4 TX PHY
- Area: 0.75mm2 with pixel PLL and 0.63mm2 without pixel PLL including IO and ESD
- Compliant with DP1.4 and eDP1.4specification
- Typical 27MHz reference clock
- Supports 1/2/4-lane configuration
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DP/eDP1.4/1.2 RX PHY
- Compliant with DP1.4 and eDP1.4 specifications
- Supports 1/2/4-lane configuration
- Up to 8.1Gbps per data lane
- Typical 24MHz or 27MHz reference clock
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HSIC PHY
- Consumes <90mW during data transfer
- Consumes <50uW when not transferring data
- Uses standard chip digital and IO supplies
- Low pin count
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800/1000 MHz DLL-based frequency multiplier
- TSMC 90 nm CMOS
- Low jitter
- Precisely aligns the clock distribution output with a reference clock
- Low current consumption
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Over-voltage Protection Module
- Implement power networks supporting up to 5.5 V​
- High voltage protection (> 1.98 V) for LDO & DC/DC​
- Low BoM Cost: no output capacitor, no extra pin​
- Generation of low power biasing currents and voltages​