PVT Sensor IP for TSMC
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- 3nm
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Process/Voltage/Temperature Sensor with Self-calibration (Supply voltage 1.2V) - TSMC 3nm N3P
- 003TSMC_PVT_01 IP library is a unique solution intended to continuously monitor IC status at several on-die locations.
- It is able to detect manufacturing process deviation, perform voltage, current and die temperature measurement.
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Ultra-Low-Power Process, Voltage, and Temperature Monitor in 3nm
- The ODT-PVT-ULP-001C-3nm is an ultra-low power temperature, voltage and process monitor designed in a 3nm CMOS process.
- This IP operates over the entire temperature range of -40°C to 150°C.
- The temperature monitor achieves ±4C temperature accuracy without trim and ±1C temperature accuracy after a single room temperature trim.
- The voltage monitor supports four differential or singleended inputs with a voltage range up to ±0.75V.
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PVT Sensor Subsystem
- Start-up time: Typ 20us
- Current consumption: Max 25uA
- Industry standard digital interface
- Fully integrated macro
- Standard AMBA APB interface
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Process/Voltage/Temperature Sensor (Supply voltage 1.8V/0.9V)
- TSMC 28nm 28HPC CMOS
- High accuracy temperature and voltage measurements
- Process detector for all-voltage threshold MOS transistors
- Up to 16 remote temperature/voltage sensors
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In-Chip Monitoring Subsystem for Process, Voltage & Temperature (PVT) Monitoring, TSMC N3E
- PVT Subsystem supporting a configurable monitoring fabric
- Measurement of dynamic and static conditions in-chip
- Thermal profiling of silicon devices
- Supply voltage analysis during device ‘mission’ mode
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PVT Controller (Series 5) (Sub-system for complete PVT monitoring), TSMC N3E
- Monitor multiple instances of Process Monitors, Voltage Monitors & Temperature Sensors
- Temperature & Voltage Alarms / Hard Stops
- PVT Statistics (max min sample values, sample counters)
- Clock synth
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In-Chip Monitoring Subsystem for Process, Voltage & Temperature (PVT) Monitoring, TSMC N3
- PVT Subsystem supporting a configurable monitoring fabric
- Measurement of dynamic and static conditions in-chip
- Thermal profiling of silicon devices
- Supply voltage analysis during device ‘mission’ mode