ESD Protection IP for Samsung

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Compare 2 ESD Protection IP for Samsung from 2 vendors (1 - 2)
  • 1.8V Capable GPIO on Samsung Foundry 4nm FinFET
    • The 1.8V capable GPIO is an IP macro for on-chip integration. It is a 1.8V general purpose I/O built with a stack of 1.2V MOS FINFET devices. It is controlled by 0.75V (core) signals.
    • Supported features include core isolation, output enable and pull enable. Extra features such as input enable/disable, programmable drive strength and pull select, can be supported upon request.
    Block Diagram -- 1.8V Capable GPIO on Samsung Foundry 4nm FinFET
  • 3.3V Wide-Range General Purpose I/O Pad Set
    • Multi-Voltage (1.8V, 2.5V, 3.3V)
    • LVCMOS / LVTTL input with selectable hysteresis
    • Programmable drive strength (rated 2mA to 12mA)
    • Selectable output slew rate
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Semiconductor IP