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RAM IP for GLOBALFOUNDRIES

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Compare 9 RAM IP for GLOBALFOUNDRIES from 5 vendors (1 - 9)
  • Single Port High-Speed Multi Bank SRAM Memory Compiler on GF 22FDX+
    • Ultra-Low Leakage - GLOBALFOUNDRIES low-leakage 6T L110 bit cells with High Vt and low leakage periphery to ensure minimal leakage and high yield.  
    • Multi-Bank Architecture - Memory split into 1 to 4 banks for reduced bit line length and enhanced timing. 
    • Ultra Low Power Standby - Built-in source biasing trims standby current to a minimum for data retention. 
    Block Diagram -- Single Port High-Speed Multi Bank SRAM Memory Compiler on GF 22FDX+
  • Single Port Low Leakage SRAM Memory Compiler on GF 22FDX+
    • Ultra-Low Leakage: High VT (HVT) and low leakage (LLHVT) devices are used with source biasing to minimize standby currents while operating at low voltage 
    • Bit Cell: Utilizes GlobalFoundries®  Ultra-Low Leakage  6T (P110UL) bit cells to ensure high manufacturing yields 
    • Five Power Modes: High Performance, Low Leakage, Standby, Retention, and Power Off modes provide flexibility for power optimization 
    • Speed Grades: Three options to adjust the speed/leakage balance and optimize for high speed or low power operation 
    Block Diagram -- Single Port Low Leakage SRAM Memory Compiler on GF 22FDX+
  • Single Port Low Leakage SRAM Memory Compiler on GF 22FDX
    • Ultra-Low Leakage: High VT (HVT) and low leakage (LLHVT) devices are used with source biasing to minimize standby currents while operating at low voltage
    • Bit Cell: Utilizes GlobalFoundries®  Ultra-Low Leakage 6T (P110UL) bit cells to ensure high manufacturing yields
    • Five Power Modes: High Performance, Low Leakage, Standby, Retention, and Power Off modes provide flexibility for power optimization
    • Speed Grades: Three options to adjust the speed/leakage balance and optimize for high speed or low power operation
    Block Diagram -- Single Port Low Leakage SRAM Memory Compiler on GF 22FDX
  • Single Port Low Leakage SRAM Memory Compiler on GF 22FDX+
    • Ultra-Low Leakage: High VT (HVT) and low leakage (LLHVT) devices are used with source biasing to minimize standby currents while operating at low voltage 
    • Bit Cell: Utilizes GlobalFoundries®  Ultra-Low Leakage, 6T(L110) bit cells to ensure high manufacturing yields  
    • Five Power Modes: High Performance, Low Leakage, Standby, Retention, and Power Off modes provide flexibility for power optimization 
    Block Diagram -- Single Port Low Leakage SRAM Memory Compiler on GF 22FDX+
  • Single Rail SRAM GLOBALFOUNDRIES 22FDX
    • Ultra-low voltage logic designs using adaptive body biasing demand dense SRAM solutions which fully integrate in the ABB aware implementation and sign-off flow of the Racyics® ABX Platform solution.
    • The Racyics® Single Rail SRAM supports ultra-low voltage operation down to 0.55 V where logic designs with Minimum-Energy-Point are implemented.
    Block Diagram -- Single Rail SRAM GLOBALFOUNDRIES 22FDX
  • Dual Rail SRAM Globalfoundries 22FDX
    • Single port SRAM compiler based on P124 bitcell with Dual-supply-rail architecture
    • Bitcell array supply voltage 0.8V and ULV core interface down to 0.4V enabled with Racyics' ABB
    Block Diagram -- Dual Rail SRAM Globalfoundries 22FDX
  • Memory Compilers
    • Dolphin provides a wide range of Memory Compilers and Specialty Memory (ROM, Multi Port RF, CAM, etc.) optimized to meet even the most demanding requirements for high performance, high density and low power.
  • Memory Compiler in TSMC (16nm,22nm,28nm,40nm,55nm,90BCD+,110nm,152nm,180BCD)
    • Synchronous read/write operation
    • Low leakage current and lower operation power consumption
    • Minimum metal layer requirement: 4/3 metal layers
    • High density layout structure and small area design
  • GLOBALFOUNDRIES 22nm Low Power Single-Port SRAM Compiler
    • Low Power
    • Low Leakage
    • High Density
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