TSMC 28nm Design Advisory
February 1, 2010
Transistors may be shrinking but atoms are not. Transistors are now just a handful of atoms so it matters even more when a couple of those atoms are out of place. Process variations, whether they are statistical, proximity, or otherwise, have got to be thoughtfully accounted for if we are to achieve the low-power, high-performance, and high yield design goals at 28nm.
Related Semiconductor IP
- Root of Trust (RoT)
- Fixed Point Doppler Channel IP core
- Multi-protocol wireless plaform integrating Bluetooth Dual Mode, IEEE 802.15.4 (for Thread, Zigbee and Matter)
- Polyphase Video Scaler
- Compact, low-power, 8bit ADC on GF 22nm FDX
Related Blogs
- TSMC 28nm Beats Q1 2012 Expectations!
- TSMC Gets 28nm Yield Up Over 80%
- TSMC 28nm Update Q3 2012!
- TSMC Unleashes Aggressive 28nm Strategy!
Latest Blogs
- Cadence Announces Industry's First Verification IP for Embedded USB2v2 (eUSB2v2)
- The Industry’s First USB4 Device IP Certification Will Speed Innovation and Edge AI Enablement
- Understanding Extended Metadata in CXL 3.1: What It Means for Your Systems
- 2025 Outlook with Mahesh Tirupattur of Analog Bits
- eUSB2 Version 2 with 4.8Gbps and the Use Cases: A Comprehensive Overview