TSMC 28nm Design Advisory
February 1, 2010
Transistors may be shrinking but atoms are not. Transistors are now just a handful of atoms so it matters even more when a couple of those atoms are out of place. Process variations, whether they are statistical, proximity, or otherwise, have got to be thoughtfully accounted for if we are to achieve the low-power, high-performance, and high yield design goals at 28nm.
Related Semiconductor IP
- Sine Wave Frequency Generator
- CAN XL Verification IP
- Rad-Hard GPIO, ODIO & LVDS in SkyWater 90nm
- 1.22V/1uA Reference voltage and current source
- 1.2V SLVS Transceiver in UMC 110nm
Related Blogs
- TSMC 28nm Yield Explained!
- TSMC absolutely did NOT halt 28nm production!
- The Truth of TSMC 28nm Yield!
- TSMC 28nm Beats Q1 2012 Expectations!
Latest Blogs
- The Perfect Solution for Local AI
- UA Link vs Interlaken: What you need to know about the right protocol for AI and HPC interconnect fabrics
- Analog Design and Layout Migration automation in the AI era
- UWB, Digital Keys, and the Quest for Greater Range
- Building Smarter, Faster: How Arm Compute Subsystems Accelerate the Future of Chip Design