Thick Oxyde Standard Cell library IP
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11
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10)
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12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- No need for a voltage regulator as it is directly connected to the battery
- Cells designed with 3.3 V thick-oxyde transistors to support a wide operating voltage range from 3.3 V +/-10% to 1.1 V +/-10%
- Custom characterization corners down to 1.1 V +/-10% can be provided
- Ideal for always on clock islets (RTC) and always on functional islets (voice recognition)
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12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- No need for a voltage regulator as directly connected to the battery
- Cells designed with 3.3 V thick-oxyde transistors to support a wide operating voltage range from 3.3 V +/-10% to 1.1 V +/-10%
- Custom characterization corners down to 1.1 V +/-10% can be provided
- Ideal for always on clock islets (RTC) and always on functional islets (voice recognition)
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12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- No need for a voltage regulator
- Cells designed with 3.3 V thick-oxyde transistors to support a wide operating voltage range from 3.3 V +/-10% to 1.1 V +/-10%
- Custom characterization corners down to 1.1 V +/-10% can be provided
- Ideal for always on clock islets (RTC) and always on functional islets (voice recognition)
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12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- No need for a voltage regulator as it is directly connected to the battery
- Cells designed with 3.3 V thick-oxyde transistors to support a wide operating voltage range from 3.3 V +/-10% to 1.1 V +/-10%
- Custom characterization corners down to 1.1 V +/-10% can be provided
- Ideal for always on clock islets (RTC) and always on functional islets (voice recognition)
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10 track thick oxide standard cell library at TSMC 55 - low leakage and direct battery connection (operating voltages from 1.08 V to 3.63 V)
- No need for a voltage regulator
- Cells designed with 3.3 V thick-oxyde transistors to support a wide operating voltage range from 3.3 V +/-10% to 1.2 V +/-10%
- Custom characterization corners down to 1.10 V +/-10% can be provided
- Ideal for always on clock islets (RTC) and always on functional islets (voice recognition?)
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9 track thick oxide standard cell library at TSMC 180 - low leakage and direct battery connection (operating voltages from 1.62 V to 3.63 V)
- Easy creation of ultra low leakage islets: reduce leakage up to 1000 times at 180 nm
- Power-off or even avoid a regulator thanks to direct battery or pad interface
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8 track thick oxide standard cell library at TSMC 130 - low leakage and direct battery connection (operating voltages from 1.08 V to 3.63 V)
- Easy creation of ultra low leakage islets: reduce leakage up to 1000 times at 180 nm
- Power-off or even avoid a regulator thanks to direct battery or pad interface
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8 track thick oxide standard cell library at TSMC 90 - low leakage and direct battery connection (operating voltages from 1.08 V to 3.63 V)
- No need for a voltage regulator
- Cells designed with 3.3 V thick-oxyde transistors to support a wide operating voltage range from 3.3 V +/-10% to 1.2 V +/-10%
- Standard voltage range from 1.08 V up to 3.63 V thanks to patented flip flops
- Custom characterization corners down to 1.10 V +/-10% can be provided
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9 track thick oxide standard cell library at TSMC 180 - low leakage and direct battery connection (operating voltages from 1.62 V to 3.63 V)
- Leakage divided by 1000 compared to conventional library at 180 nm
- Directly connected to the battery
- Avoid the need of a regulator
- Denser than an HVT library coupled to a regulator.
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8 track thick oxide standard cell library at TSMC 90 - low leakage and direct battery connection (operating voltages from 1.08 V to 3.63 V)
- No need for a voltage regulator
- Cells designed with 3.3 V thick-oxyde transistors to support a wide operating voltage range from 3.3 V +/-10% to 1.2 V +/-10%
- Custom characterization corners down to 1.10 V +/-10% can be provided
- Ideal for always on clock islets (RTC) and always on functional islets (voice recognition?)