9 track thick oxide standard cell library at TSMC 180 - low leakage and direct battery connection (operating voltages from 1.62 V to 3.63 V)
Overview
TSMC 180 RF, SESAME BIV, a new thick oxyde based standard cell library for ultra low leakage logic design and/or direct battery connection through the use of a patented flip flop.
Key Features
- Easy creation of ultra low leakage islets: reduce leakage up to 1000 times at 180 nm
- Power-off or even avoid a regulator thanks to direct battery or pad interface
Technical Specifications
Short description
9 track thick oxide standard cell library at TSMC 180 - low leakage and direct battery connection (operating voltages from 1.62 V to 3.63 V)
Vendor
Vendor Name
Maturity
Pre-silicon
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