12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
Overview
SESAME BiV 40 uLP a new thick oxyde based standard cell library for ultra low leakage logic design and/or direct battery connection through the use of a patented flip flop.
Key Features
- No need for a voltage regulator as directly connected to the battery
- Cells designed with 3.3 V thick-oxyde transistors to support a wide operating voltage range from 3.3 V +/-10% to 1.1 V +/-10%
- Custom characterization corners down to 1.1 V +/-10% can be provided
- Ideal for always on clock islets (RTC) and always on functional islets (voice recognition)
- Leakage reduction of 1/700 for a 5,000 gates islet implemented with BIV at 3.3 V, compared to a conventional HVT library operating at 1.2 V
- Higher density compared to HVT library combined with voltage regulator
- 12-track cells
- SoC Integration secured and simplified from 3.3 V to 1.1 V
- Full set of high-low and low-high level shifters isolated or not
Technical Specifications
Maturity
Pre-silicon
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