9 track thick oxide standard cell library at TSMC 180 - low leakage and direct battery connection (operating voltages from 1.62 V to 3.63 V)
Overview
TSMC 180 G, SESAME BIV, a new thick oxyde based standard cell library for ultra low leakage logic design and/or direct battery connection through the use of a patented flip flop.
Key Features
- Leakage divided by 1000 compared to conventional library at 180 nm
- Directly connected to the battery
- Avoid the need of a regulator
- Denser than an HVT library coupled to a regulator.
Technical Specifications
Short description
9 track thick oxide standard cell library at TSMC 180 - low leakage and direct battery connection (operating voltages from 1.62 V to 3.63 V)
Vendor
Vendor Name
Maturity
In_Production
TSMC
In Production:
180nm
G
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