FDSOI SRAM IP

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Foundries

GLOBALFOUNDRIES (2)
Samsung (2)

Nodes

22nm (2)
28nm (2)

IP Type

Silicon IP (7)

Compare 7 IP from 3 vendors (1 - 7)

Single Port Low Leakage SRAM Memory Compiler on GF 22FDX
- Ultra-Low Leakage: High VT (HVT) and low leakage (LLHVT) devices are used with source biasing to minimize standby currents while operating at low voltage
- Bit Cell: Utilizes GlobalFoundries® Ultra-Low Leakage 6T (P110UL) bit cells to ensure high manufacturing yields
- Five Power Modes: High Performance, Low Leakage, Standby, Retention, and Power Off modes provide flexibility for power optimization
- Speed Grades: Three options to adjust the speed/leakage balance and optimize for high speed or low power operation
GLOBALFOUNDRIES 22nm High Density Single-Port SRAM Compiler
- High Density
- Low Leakage
- Low Power
- High Speed
GLOBALFOUNDRIES 22nm Low Leakage Single-Port SRAM Compiler
- Low Leakage
- Low Power
- High Density
GLOBALFOUNDRIES 22nm Low Power Single-Port SRAM Compiler
- Low Power
- Low Leakage
- High Density
Samsung 28nm Low Voltage Single-Port SRAM Compiler
- Low Voltage
- Low Power
- High Density
- High Speed
Samsung 28nm Low Power Single-Port SRAM Compiler
- Low Power
- Low Leakage
- High Density
- High Speed
ReRAM NVM in SkyWater 130nm
- Weebit Resistive RAM (ReRAM) is a new type of Non-Volatile Memory (NVM) that is designed to be the successor to flash memory.
- Weebit ReRAM IP can provide a high level of differentiation for System-on-Chip (SoC) designs, with performance, power, cost, security, environmental, and a range of additional advantages compared to flash and other NVMs.
- Weebit’s first ReRAM IP product is available now in SkyWater Technology’s 130nm CMOS process (S130). The technology is fully qualified, available for integration in SkyWater’s users’ SoCs, and ready for production.