VeriSilicon GLOBALFOUNDRIES 22FDSOI Low Power Synchronous Single-Port SRAM compiler optimized for GLOBALFOUNDRIES FDSOI 22nm process can flexibly generate memory blocks via a friendly GUI or shell commands. The compiler supports a comprehensive range of words and bits. While satisfying speed and power requirements, it has been optimized for area efficiency.
VeriSilicon GLOBALFOUNDRIES 22FDSOI Low Power Synchronous Single-Port SRAM compiler uses thin metals up to metal5. Dummy bit cells are designed in with the intention to enhance reliability.
GLOBALFOUNDRIES 22nm Low Leakage Single-Port SRAM Compiler
Overview
Key Features
- Low Leakage
- Low Power
- High Density
- High Speed
- Size Sensitive Self-Time Delay for Fast Access
- Automatic Power Down
- Write Mask Function
- More details, please go to below website to contact VeriSilicon location sales : http://www.verisilicon.com/en/contactus.asp
Technical Specifications
Foundry, Node
GlobalFoundries, 22nm
Maturity
Silicon Proven
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