FDSOI IP
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74
IP
from 13 vendors
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10)
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MIPI D-PHY Transmitter/Receiver for DSI/CSI-2 Samsung 28nm FD-SOI
- 4 Data Channel transmitter/receiver hard macro for DSI/CSI-2 of Samsung 28nm FD-SOI process
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GLOBALFOUNDARIES 22nm FDSOI LVDS Transceiver Pad
- GLOBALFOUNDARIES 22nm FDSOI 0.8V/1.8V process
- Supports up to 1.05Gbps data rate
- Built-in 100 Ohm resistor in receiver end and transmitter, can be disable
- Power down mode available
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Samsung 28nm FDSOI MIPI DPHY V1.1
- Process: Samsung FDSOI 28nm 0.9V/1.8V, metal option TBD.
- Compliant to the MIPI D-PHY spec v1.1
- Data rate per lane: High-Speed mode 80M~1.5G bps, Low-Power mode 10Mbps
- Lane type:1 clock + 2 data, bi-directional
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Samsung 28nm FDSOI 1.8v/1.0v LVDS Transmitter
- Process: Samsung 28nm FDSOI process
- Supply voltage: 2.25V<=VDD25<=2.75V, 0.9V<=VDD10<=1.1V 1.62V<=VDD18<=1.98v
- Mos device: pfet, nfet, egpfet, egnfet, rpposab
- Operating current:VDD25<24mA
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Samsung 28nm FDSOI 1.8v/1.0v sub-LVDS Receiver
- Process: Samsung 28nm FDSOI process (0.9V / 1.8V)
- Supply voltage: 1.62V<=AVDD18<=1.98V, 0.9V<=AVDD10(VDD10)<=1.1V
- Mos device: pfet, nfet, egpfet, egnfet
- Operating current:AVDD18<24mA AVDD10<2mA
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Samsung 28nm FDSOI 1.8v/1.0v APLL
- Process: Samsung 28nm FDSOI 1.0v1.8v process
- Supply voltage: 1.62V<=AVDD<=1.98V, 0.9V<=DVDD(AVDD2)<=1.1V
- Mos device: pfet, nfet, egpfet, egnfet, vncap, rpposab
- Operating current:AVDD<4mA(2.4GHz)
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12-Bit SAR ADC in GlobalFoundries 22nm FDSOI
- Process: GF22n FDSOI 0.8V, metal stack is 7L1X_1T6X_LB
- Resolution: 12-bit resolution
- DNL: +/-1.5 LSB, INL: +/-3 LSB
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12-Bit SAR ADC in GlobalFoundries 22nm FDSOI
- Process: GF22n FDSOI 0.8/1.8V, metal stack is 7L1X_1T6X_LB
- Resolution: 12-bit resolution
- DNL: +/-1.5 LSB, INL: +/-3 LSB
- Analog input range: VREFL to VREFH, could be rail-to-rail
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Samsung 28nm FDSOI 1.8v/1.0v APLL
- Process: Samsug 28nm FDSOI 1V/1.8V CMOS process
- Supply voltage: 0.9V<=VDDA<=1.1V, 0.9V<=VDD<=1.1V
- Mos device type: nfet, pfet
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Samsung 28nm FDSOI 1.8v/1.0v APLL
- Process: Samsug 28nm FDSOI 1V/1.8V CMOS process
- Supply voltage: 0.9V<=VDDA<=1.1V, 0.9V<=VDD<=1.1V