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FDSOI IP

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Compare 69 IP from 14 vendors (1 - 10)
  • USB3.0 PHY on GF22FDX and Samsung 28nm FDSOI
    • The USB3.0 PHY IP is designed according to the USB 3.0, USB2.0 Specification.
    • It supports the USB3.0 5Gbps Super-Speed mode and backward compatibles with the USB2.0 480Mbps High-Speed, 12Mbps Full-Speed, and 1.5Mbps Low-Speed modes
    • The USB 3.0 PHY interface complies with PHY Interface for PCI Express and USB3.0 Architectures specification (PIPE 3.0) and the USB2.0 PHY interface complies with the UTMI v1.05 specification.
       
    Block Diagram -- USB3.0 PHY on GF22FDX and Samsung 28nm FDSOI
  • GLOBALFOUNDARIES 22nm FDSOI LVDS Transceiver Pad
    • GLOBALFOUNDARIES 22nm FDSOI 0.8V/1.8V process
    • Supports up to 1.05Gbps data rate
    • Built-in 100 Ohm resistor in receiver end and transmitter, can be disable
    • Power down mode available
  • MIPI D-PHY Transmitter/Receiver for DSI/CSI-2 Samsung 28nm FD-SOI
    • 4 Data Channel transmitter/receiver hard macro for DSI/CSI-2 of Samsung 28nm FD-SOI process
    Block Diagram -- MIPI D-PHY Transmitter/Receiver for DSI/CSI-2 Samsung 28nm FD-SOI
  • Samsung 28nm FDSOI MIPI DPHY V1.1
    • Process: Samsung FDSOI 28nm 0.9V/1.8V, metal option TBD.
    • Compliant to the MIPI D-PHY spec v1.1
    • Data rate per lane: High-Speed mode 80M~1.5G bps, Low-Power mode 10Mbps
    • Lane type:1 clock + 2 data, bi-directional
  • Samsung 28nm FDSOI 1.8v/1.0v LVDS Transmitter
    • Process: Samsung 28nm FDSOI process
    • Supply voltage: 2.25V<=VDD25<=2.75V, 0.9V<=VDD10<=1.1V 1.62V<=VDD18<=1.98v
    • Mos device: pfet, nfet, egpfet, egnfet, rpposab
    • Operating current:VDD25<24mA
  • Samsung 28nm FDSOI 1.8v/1.0v sub-LVDS Receiver
    • Process: Samsung 28nm FDSOI process (0.9V / 1.8V)
    • Supply voltage: 1.62V<=AVDD18<=1.98V, 0.9V<=AVDD10(VDD10)<=1.1V
    • Mos device: pfet, nfet, egpfet, egnfet
    • Operating current:AVDD18<24mA AVDD10<2mA
  • Samsung 28nm FDSOI 1.8v/1.0v APLL
    • Process: Samsung 28nm FDSOI 1.0v1.8v process
    • Supply voltage: 1.62V<=AVDD<=1.98V, 0.9V<=DVDD(AVDD2)<=1.1V
    • Mos device: pfet, nfet, egpfet, egnfet, vncap, rpposab
    • Operating current:AVDD<4mA(2.4GHz)
  • 12-Bit SAR ADC in GlobalFoundries 22nm FDSOI
    • Process: GF22n FDSOI 0.8V, metal stack is 7L1X_1T6X_LB
    • Resolution: 12-bit resolution
    • DNL: +/-1.5 LSB, INL: +/-3 LSB
  • 12-Bit SAR ADC in GlobalFoundries 22nm FDSOI
    • Process: GF22n FDSOI 0.8/1.8V, metal stack is 7L1X_1T6X_LB
    • Resolution: 12-bit resolution
    • DNL: +/-1.5 LSB, INL: +/-3 LSB
    • Analog input range: VREFL to VREFH, could be rail-to-rail
  • Samsung 28nm FDSOI 1.8v/1.0v APLL
    • Process: Samsug 28nm FDSOI 1V/1.8V CMOS process
    • Supply voltage: 0.9V<=VDDA<=1.1V, 0.9V<=VDD<=1.1V
    • Mos device type: nfet, pfet
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