Samsung 28nm FDSOI 1.8v/1.0v sub-LVDS Receiver

Key Features

• Process: Samsung 28nm FDSOI process (0.9V / 1.8V)
• Supply voltage: 1.62V<=AVDD18<=1.98V, 0.9V<=AVDD10(VDD10)<=1.1V
• Mos device: pfet, nfet, egpfet, egnfet
• Operating current:AVDD18<24mA AVDD10<2mA
• Operating junction temperature: - 40°C ~ +25°C ~ +125°C

Technical Specifications