Samsung 28nm FDSOI 1.8v/1.0v APLL
Key Features
- Process: Samsung 28nm FDSOI 1.0v1.8v process
- Supply voltage: 1.62V<=AVDD<=1.98V, 0.9V<=DVDD(AVDD2)<=1.1V
- Mos device: pfet, nfet, egpfet, egnfet, vncap, rpposab
- Operating current:AVDD<4mA(2.4GHz)
- Operating junction temperature: - 40°C ~ +25°C ~ +125°C
Technical Specifications
Foundry, Node
Samsung 28nm FDSOI
Maturity
Silicon Proven
Samsung
Silicon Proven:
28nm
FDS