Samsung to Invest $7 Billion in China Fab
Alan Patterson, EETimes
8/29/2017 11:31 AM EDT
TAIPEI — Samsung will invest $7 billion over a three-year period to ramp up a Chinese fab to expand production of NAND flash memory that’s in strong demand for smartphones and other mobile devices.
The investment is for a new fab in Xi’an that would be the second chip facility at the northern China site. On Monday (Aug. 28), Samsung approved $2.3 billion of the expected investment of $7 billion, according to reports by Reuters and Bloomberg that said the South Korea-based chipmaker was their news source.
To read the full article, click here
Related Semiconductor IP
- Ultra-Low-Power LPDDR3/LPDDR2/DDR3L Combo Subsystem
- Parameterizable compact BCH codec
- 1G BASE-T Ethernet Verification IP
- Network-on-Chip (NoC)
- Microsecond Channel (MSC/MSC-Plus) Controller
Related News
- Exec tried to set up copy-cat Samsung fab in China
- Foxconn Reportedly Readies Chip Fab in China
- Samsung Selects Texas as Site for $17 Billion Fab
- Samsung fab cobbling IP offerings for data-intensive SoCs
Latest News
- ISOLDE Project Demonstrates Advancements in European Open-Source RISC-V for Automotive, Space, and IoT
- ACL Digital and AIM FUTURE Partner to Drive Innovation in Edge AI
- Tenstorrent and PwC Partner to Advance AI Ecosystem Development in Cyprus
- Republic of Cyprus Selects Tenstorrent for AI Innovation
- SiFive and IAR Collaborate to Advance the Automotive Ecosystem and Drive RISC-V Innovation in Automotive Electronics