Samsung to Invest $7 Billion in China Fab
Alan Patterson, EETimes
8/29/2017 11:31 AM EDT
The investment is for a new fab in Xi’an that would be the second chip facility at the northern China site. On Monday (Aug. 28), Samsung approved $2.3 billion of the expected investment of $7 billion, according to reports by Reuters and Bloomberg that said the South Korea-based chipmaker was their news source.
To read the full article, click here
Related Semiconductor IP
- HBM4 PHY IP
- Ultra-Low-Power LPDDR3/LPDDR2/DDR3L Combo Subsystem
- MIPI D-PHY and FPD-Link (LVDS) Combinational Transmitter for TSMC 22nm ULP
- VIP for Compute Express Link (CXL)
- HBM4 Controller IP
Related News
- Exec tried to set up copy-cat Samsung fab in China
- Foxconn Reportedly Readies Chip Fab in China
- Samsung Selects Texas as Site for $17 Billion Fab
- Samsung fab cobbling IP offerings for data-intensive SoCs
Latest News
- HBM4 Mass Production Delayed to End of 1Q26 By Spec Upgrades and Nvidia Strategy Adjustments
- ASICLAND Secures USD 17.6 Million Storage Controller Mass Production Contract
- TSMC to Lead Rivals at 2-nm Node, Analysts Say
- Energy-efficient RF power modules developed using SOI technology
- Quintauris Demonstrates RISC-V Innovation in Automotive at CES