ProMOS pulls in 90nm mass production schedule, fueling 2H’05 operating performance
-- ProMOS Technologies (5387.TWO) today announced that the pilot run result of 90nm stack technology node at ProMOS 300mm Fab 3 has successfully performed with production yield at 80%. Early deploying the mass production schedule of 90nm stack technology node amid the remarkable pilot run result should further fuel company operating performance through production cost decrease.
Dr. Ben Tseng, VP of Sales & Marketing Group and corporate spokesman, noted that the first pilot product of 512Mb DDR DRAM by 90nm stack process technology at ProMOS 300mm Fab 3 was successfully released with impressed production yield at 60% on July 8, 2005. Full-line pilot run of the 90nm was implemented following the first batch release and the full line production yield reached at 80%. The remarkable achievement was only possible through the relentless efforts by every one associated with Fab 3. It is projected that 10 K 300mm wafer out by 90nm in Q4 due to the pull-in 90nm mass production schedule.
Dr. Ben Tseng further stated that projected wafer starts of 7K/month in Q405 at PrOMOS 300mm Fab 3. Wafer starts of 15 k/month and 30k/month are to be executed by Q106 and Q406, respectively. By 2007, the maximum capacity at ProMOS Fab 3 will reach 40 k/month - 45 k/month.
About ProMOS
ProMOS Technologies, Hsin-chu, Taiwan, is a full-blown memory solution provider and is renowned in the global DRAM industry for its outstanding performance in manufacturing excellence and technology advancement. The company manufactures high-performance and high-density commodity DRAM memory chips as well as pseudo-SRAM, lower power SDRAM and MCM products. ProMOS is listed on Taiwan GreTai Securities Market. For more information, please visit www.promos.com.tw.
Related Semiconductor IP
- 1.8V/3.3V I/O library with ODIO and 5V HPD in TSMC 16nm
- 1.8V/3.3V I/O Library with ODIO and 5V HPD in TSMC 12nm
- 1.8V to 5V GPIO, 1.8V to 5V Analog in TSMC 180nm BCD
- 1.8V/3.3V GPIO Library with HDMI, Aanlog & LVDS Cells in TSMC 22nm
- Specialed 20V Analog I/O in TSMC 55nm
Related News
- ProMOS Debuts First 90nm Silicon with High Yield
- Hua Hong Semiconductor's 90nm eFlash Process Platform Successfully Achieved Mass Production
- Efinix Releases Topaz Line of FPGAs, Delivering High Performance and Low Power to Mass Market Applications
- TSMC to Kick off Mass Production of Intel CPUs in 2H21 as Intel Shifts its CPU Manufacturing Strategies, Says TrendForce
Latest News
- Will RISC-V reduce auto MCU’s future risk?
- Frontgrade Gaisler Launches New GRAIN Line and Wins SNSA Contract to Commercialize First Energy-Efficient Neuromorphic AI for Space Applications
- Continuous-Variable Quantum Key Distribution (CV-QKD) system demonstration
- Latest intoPIX JPEG XS Codec Powers FOR-A’s FA-1616 for Efficient IP Production at NAB 2025
- VeriSilicon Launches ISP9000: The Next-Generation AI-Embedded ISP for Intelligent Vision Applications