ProMOS Debuts First 90nm Silicon with High Yield
-- ProMOS Technologies (5387.TWO) today announced that the first pilot lot by 90nm stack technology node at ProMOS 300mm Fab 3 has successfully wafered out with yield above 60%. ProMOS is the very first Taiwan DRAM company to achieve this breakthrough with high yield on the pilot wafers. This superior performance showcases ProMOS’ excellence in technological advancement and marks a significant milestone in leading-edge 90nm process technology.
This is the first pilot product of 512Mb DRAM by 90nm stack process technology at ProMOS 300mm Fab 3. With completion of functional test on July 8, 2005, the yielding die of 512Mb DRAM also demonstrates the first chip out by 90nm process technology at ProMOS 300mm Fab 3.
Since groundbreaking construction commencement in April 2004, the first wafer has already shown impressed yield performance at 300mm Fab 3 within 14 months, further illustrating ProMOS’ fab operating efficiency and technological competency.
Based on this preliminary success, ProMOS will continue the manufacturing process and product verifications according to the planned schedule. Projected wafer starts of 15K/month and 30k/month are to be executed by Q106 and Q406, respectively.
About ProMOS
ProMOS Technologies, Hsin-chu, Taiwan, is a full-blown memory solution provider and is renowned in the global DRAM industry for its outstanding performance in manufacturing excellence and technology advancement. The company manufactures high-performance and high-density commodity DRAM memory chips as well as pseudo-SRAM, lower power SDRAM and MCM products. ProMOS is listed on Taiwan GreTai Securities Market. For more information, please visit www.promos.com.tw.
Related Semiconductor IP
- 1.8V/3.3V I/O library with ODIO and 5V HPD in TSMC 16nm
- 1.8V/3.3V I/O Library with ODIO and 5V HPD in TSMC 12nm
- 1.8V to 5V GPIO, 1.8V to 5V Analog in TSMC 180nm BCD
- 1.8V/3.3V GPIO Library with HDMI, Aanlog & LVDS Cells in TSMC 22nm
- Specialed 20V Analog I/O in TSMC 55nm
Related News
- LogicVision Debuts Easy to Use Nanometer Test Solution for Higher Yield Quality, Lower Cost-of-Test and Faster Time-to-Market
- ProMOS pulls in 90nm mass production schedule, fueling 2H’05 operating performance
- Genesys Testware Adds Support for Fuse Arrays to Improve the Yield of Embedded Memories
- Lexra Debuts Lx4380: The Fastest Synthesizable 32-Bit Risc Core
Latest News
- Will RISC-V reduce auto MCU’s future risk?
- Frontgrade Gaisler Launches New GRAIN Line and Wins SNSA Contract to Commercialize First Energy-Efficient Neuromorphic AI for Space Applications
- Continuous-Variable Quantum Key Distribution (CV-QKD) system demonstration
- Latest intoPIX JPEG XS Codec Powers FOR-A’s FA-1616 for Efficient IP Production at NAB 2025
- VeriSilicon Launches ISP9000: The Next-Generation AI-Embedded ISP for Intelligent Vision Applications