Philips licenses MoSys 1T-SRAM with error correction for 0.13-micron designs

Philips licenses MoSys 1T-SRAM with error correction for 0.13-micron designs
By Semiconductor Business News
April 18, 2002 (2:29 p.m. EST)
URL: http://www.eetimes.com/story/OEG20020418S0021

SUNNYVALE, Calif.-- MoSys Inc. today announced it has licensed its one-transistor SRAM cell technology, called T1-SRAM, to Philips Semiconductors, which plans to use the embedded memory in cellular infrastructure ASICs and system-on-chip (SoC) designs.

The license agreement will initially be used for products fabricated with 0.13-micron process technology. The semiconductor division of Royal Philips Electronics N.V. in the Netherlands plans to use MoSys' recently announced 1T-SRAM-R technology, which incorporates error correction to eliminate the need for the laser repair in manufacturing while providing improved soft error rate, yield, and reliability (see Jan. 28 story).

Terms of the licensing agreement were not released.

"The 1T-SRAM embedded memory was evaluated according to our cellular infrastructure customer requirements, and we selected MoSys technology for it s unique performance, density and power capabilities not available from other standard [six-transistor cell] SRAM technologies," said Malcolm Spencer, general manager Cellular Infrastructure business line at Philips Semiconductors.