Memory differences remain as ST chooses Globalfoundries for FDSOI
January 09, 2018 // By Peter Clarke, eeNews Analog
STMicroelectronics has chosen Globalfoundries' 22FDX FDSOI process as a platform for its next processors for consumer and industrial applications.
However, so far Globalfoundries has not announced that it can support the phase-change memory selected by ST as its non-volatile memory option at 28nm (see ST opts for phase-change memory on 28nm FDSOI ). When asked if Globalfoundries could support phase-change memory in FDSOI Alain Mutricy, senior vice president of product marketing told eeNews Europe: "That's not the announcement we are making today."
Globalfoundries has announced embedded MRAM on 22FDX (see Globalfoundries offers embedded MRAM on 22nm FDSOI ).
The general announcement comes as little surprise as ST has been a pioneer of 28nm FDSOI and has worked for many years in partnership with foundries Samsung and Globalfoundries.
To read the full article, click here
Related Semiconductor IP
- 12-bit, 4 GSPS High Performance IQ ADC in 22nm FD-SOI
- Samsung 28nm FDSOI 1.8v/1.0v LVDS Transmitter
- General Purpose Temperature Sensor - 2°C accuracy – 10-bit Digital Readout - Globalfoundries 22nm FD-SOI
- USB3.0 PHY on GF22FDX and Samsung 28nm FDSOI
- GLOBALFOUNDRIES 22nm FDSOI USB3.0 PHY
Related News
- ST plans for Dresden FDSOI production
- ST to deny rivals FDSOI access
- ST opts for phase-change memory on 28nm FDSOI
- Mobile Semiconductor's 22FDX Register File Memory Compiler Receives Globalfoundries Platinum Status
Latest News
- CAST Releases First Dual LZ4 and Snappy Lossless Data Compression IP Core
- Arteris Wins “AI Engineering Innovation Award” at the 2025 AI Breakthrough Awards
- SEMI Forecasts 69% Growth in Advanced Chipmaking Capacity Through 2028 Due to AI
- eMemory’s NeoFuse OTP Qualifies on TSMC’s N3P Process, Enabling Secure Memory for Advanced AI and HPC Chips
- AIREV and Tenstorrent Unite to Launch Advanced Agentic AI Stack