ST plans for Dresden FDSOI production
Peter Clarke, EETimes
1/20/2013 1:34 PM EST
LONDON – STMicroelectronics is in discussions with Globalfoundries Inc. on a transfer of fully depleted silicon on insulator (FDSOI) manufacturing process technology for volume production in 2013, according to a senior executive at ST.
ST claims that at 28-nm, its FDSOI process can provide 30 percent more performance than bulk 28-nm CMOS at the same power consumption, or, alternatively, can provide as much as a 50 percent saving in dynamic power consumption at the same performance. This is because FDSOI allows the use of voltages down to 0.6-V whereas bulk CMOS only goes down to about 0.9-V, said Joel Hartmann, executive vice president of front-end manufacturing and process R&D, for the digital sector at ST.
Related Semiconductor IP
- 512x8 Bits OTP (One-Time Programmable) IP, GLOBALFOUNDRIES 0.13um BCD 1.5V/5V Process
- 5V ESD Clamp in GlobalFoundries 180nm LPe
- DDR4 Multi-modal PHY - GLOBALFOUNDRIES 12nm
- DDR3 PHY - GLOBALFOUNDRIES 12nm
- DDR4 PHY - GLOBALFOUNDRIES 12nm
Related News
- STMicroelectronics and GlobalFoundries to advance FD-SOI ecosystem with new 300mm manufacturing facility in France
- STMicroelectronics Secures Additional Sourcing for its Leading-Edge 28nm and 20nm FD-SOI Technology with GLOBALFOUNDRIES
- ST to deny rivals FDSOI access
- Leti and STMicroelectronics Demonstrate Order-of-Magnitude-Faster FD-SOI Ultra-Wide-Voltage Range DSP
Latest News
- HPC customer engages Sondrel for high end chip design
- PCI-SIG’s Al Yanes on PCIe 7.0, HPC, and the Future of Interconnects
- Ubitium Debuts First Universal RISC-V Processor to Enable AI at No Additional Cost, as It Raises $3.7M
- Cadence Unveils Arm-Based System Chiplet
- Frontgrade Gaisler Unveils GR716B, a New Standard in Space-Grade Microcontrollers