Firms push to extend mobile DRAM spec
Mark LaPedus, EETimes
2/22/2011 4:39 PM EST
SAN FRANCISCO – There is a proposed standard to extend mobile DRAM technology to higher speeds-a move that could push out competing next-generation efforts from MIPI, Rambus, Silicon Image and the 3-D chip community.
There are discussions within industry body JEDEC to extend LPDDR2 technology to run at speeds of 800-MHz-and perhaps 1,066-MHz. Elpida, Hynix, Micron and Samsung separately have some or all of these LPDDR2 parts in the works.
To read the full article, click here
Related Semiconductor IP
- USB 20Gbps Device Controller
- 25MHz to 4.0GHz Fractional-N RC PLL Synthesizer on TSMC 3nm N3P
- AGILEX 7 R-Tile Gen5 NVMe Host IP
- 100G PAM4 Serdes PHY - 14nm
- Bluetooth Low Energy Subsystem IP
Related News
- Cadence Spectre FX FastSPICE Simulator Is Adopted by SK Hynix to Accelerate DRAM Design
- Servers gas up with 4-Gbyte/s PCI-X 2.0 spec
- Spec eyes 'plug and play' test for virtual components <!-- verification -->
- VSI Alliance updates virtual component interface spec
Latest News
- 2025 TSMC OIP Ecosystem Forum Highlights Aion Silicon’s Leadership in Advanced SoC Design
- Ceva Appoints Former Microsoft AI and Hardware Leader Yaron Galitzky to Accelerate Ceva’s AI Strategy and Innovation at the Smart Edge
- Dnotitia Unveils VDPU IP, the First Accelerator IP for Vector Database
- Ambient Scientific AI-native processor for edge applications offers 100x power and performance improvements over 32-bit MCUs
- Qualitas Semiconductor Signs PCIe Gen 4.0 PHY IP License Agreement with Leading Chinese Fabless Customer