Leti Strains to Improve FDSOI
Peter Clarke
12/17/2015 10:44 AM EST
STMicroelectronics and Globalfoundries are championing the FDSOI process as a means to achieve world-class energy efficiency in leading edge integrated circuits without the complexity and expense of FinFET manufacturing.
To read the full article, click here
Related Semiconductor IP
- Ultra-Low-Power LPDDR3/LPDDR2/DDR3L Combo Subsystem
- 1G BASE-T Ethernet Verification IP
- Network-on-Chip (NoC)
- Microsecond Channel (MSC/MSC-Plus) Controller
- 12-bit, 400 MSPS SAR ADC - TSMC 12nm FFC
Related News
- Leti and STMicroelectronics Demonstrate Order-of-Magnitude-Faster FD-SOI Ultra-Wide-Voltage Range DSP
- Leti launches new Silicon Impulse FD-SOI Development Program, to Help Designers Broaden the Use of FD-SOI for Low-power Applications
- LETI Develops 3D Network-on-Chip to Improve High-Performance Computing
- Soitec and CEA partner to develop automotive cybersecurity with advanced FD-SOI technology
Latest News
- Virtusa Acquires Bengaluru based SmartSoC Solutions, Establishing Full-Stack Service Offering from Chip to Cloud and Driving Expansion into the Semiconductor Industry
- Consumer Electronics and AI Product Launches Lift 3Q25 Top-10 Foundry Revenue by 8.1%, Says TrendForce
- Joachim Kunkel Joins Quadric Board of Directors
- RaiderChip NPU leads edge LLM benchmarks against GPUs and CPUs in academic research paper
- SEMIFIVE Secures AI Semiconductor Design Projects in Japan, Accelerating Global Expansion with New Local Subsidiary